Inventor
CHO MINHEE
KR20 patents
⚠️ This page may combine multiple inventors who share the name “CHO MINHEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS11411007B2Aug 9, 2022
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US10854612B2Dec 1, 2020
Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US9331140B2May 3, 2016
Semiconductor devices having hybrid capacitors and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations83
US9053971B2Jun 9, 2015
Semiconductor devices having hybrid capacitors and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US11917805B2Feb 27, 2024
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11062751B2Jul 13, 2021
Memory device
SAMSUNG ELECTRONICS CO LTD3 citations71
US11508851B2Nov 22, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations69
US10916655B2Feb 9, 2021
Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD4 citations69
US12532449B2Jan 20, 2026
Semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11862476B2Jan 2, 2024
Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material
SAMSUNG ELECTRONICS CO LTD0 citations62
US11647625B2May 9, 2023
Memory device having a channel provided on a memory unit
SAMSUNG ELECTRONICS CO LTD1 citations62
US12342530B2Jun 24, 2025
Transistor structure including oxide semiconductor pattern surrounding bottom and sidewall of gate and semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11922984B2Mar 5, 2024
Memory device having volatile and non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD0 citations61
US11482267B2Oct 25, 2022
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12408324B2Sep 2, 2025
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations60
US12166132B2Dec 10, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11342456B2May 24, 2022
Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations59
US12527027B2Jan 13, 2026
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations53
US12464770B2Nov 4, 2025
Semiconductor devices having vertical channel transistor structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50