Inventor
BOWEN CHRIS
CA12 patents
⚠️ This page may combine multiple inventors who share the name “BOWEN CHRIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS9263549B2Feb 16, 2016
Fin-FET transistor with punchthrough barrier and leakage protection regions
SAMSUNG ELECTRONICS CO LTD15 citations83
US9893187B2Feb 13, 2018
Sacrificial non-epitaxial gate stressors
SAMSUNG ELECTRONICS CO LTD2 citations73
US10153368B2Dec 11, 2018
Unipolar complementary logic
SAMSUNG ELECTRONICS CO LTD2 citations72
US11087055B2Aug 10, 2021
Method of screening materials using forward conducting modes
SAMSUNG ELECTRONICS CO LTD3 citations71
US11404405B2Aug 2, 2022
Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10854591B2Dec 1, 2020
Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9773904B2Sep 26, 2017
Vertical field effect transistor with biaxial stressor layer
SAMSUNG ELECTRONICS CO LTD0 citations47
US10510665B2Dec 17, 2019
Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations40
US9728502B2Aug 8, 2017
Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations40