Inventor
NAKAYAMA TAKESHI
JP143 patents
⚠️ This page may combine multiple inventors who share the name “NAKAYAMA TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
30 patentsUS5745417AApr 28, 1998
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP135 citations99
US4811294AMar 7, 1989
Data integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM)
MITSUBISHI ELECTRIC CORP203 citations99
US5428568AJun 27, 1995
Electrically erasable and programmable non-volatile memory device and a method of operating the same
MITSUBISHI ELECTRIC CORP120 citations98
US5297096AMar 22, 1994
Nonvolatile semiconductor memory device and data erasing method thereof
MITSUBISHI ELECTRIC CORP135 citations98
US5898606AApr 27, 1999
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP63 citations96
US5371705ADec 6, 1994
Internal voltage generator for a non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP76 citations96
US5363330ANov 8, 1994
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP94 citations96
US5347490ASep 13, 1994
Nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP77 citations96
US5283758AFeb 1, 1994
Non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP67 citations96
US5233610AAug 3, 1993
Semiconductor memory device having error correcting function
MITSUBISHI ELECTRIC CORP109 citations96
US5132928AJul 21, 1992
Divided word line type non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP78 citations96
US5111427AMay 5, 1992
Nonvolatile content-addressable memory and operating method therefor
MITSUBISHI ELECTRIC CORP100 citations96
US4970727ANov 13, 1990
Semiconductor integrated circuit having multiple self-test functions and operating method therefor
MITSUBISHI ELECTRIC CORP95 citations96
US4958317ASep 18, 1990
Nonvolatile semiconductor memory device and a writing method using electron tunneling
MITSUBISHI ELECTRIC CORP60 citations96
US4953129AAug 28, 1990
Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor
MITSUBISHI ELECTRIC CORP90 citations96
US4903236AFeb 20, 1990
Nonvolatile semiconductor memory device and a writing method therefor
MITSUBISHI ELECTRIC CORP81 citations96
US5659505AAug 19, 1997
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP67 citations95
US5615149AMar 25, 1997
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP28 citations93
US5544117AAug 6, 1996
Non-volatile semiconductor memory device with improved collective erasing operation
MITSUBISHI ELECTRIC CORP40 citations93
US5402382AMar 28, 1995
Nonvolatile semiconductor memory device capable of erasing by a word line unit
MITSUBISHI ELECTRIC CORP32 citations93
US5022009AJun 4, 1991
Semiconductor memory device having reading operation of information by differential amplification
MITSUBISHI ELECTRIC CORP31 citations93
US4933906AJun 12, 1990
Non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP45 citations93
US4858194AAug 15, 1989
Nonvolatile semiconductor memory device using source of a single supply voltage
MITSUBISHI ELECTRIC CORP44 citations93
US4813018AMar 14, 1989
Nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP42 citations93
US4805151AFeb 14, 1989
Nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP48 citations93
US4733371AMar 22, 1988
Semiconductor memory device with high voltage switch
MITSUBISHI ELECTRIC CORP51 citations93
US4694314ASep 15, 1987
Semiconductor device
MITSUBISHI ELECTRIC CORP29 citations93
US5602778AFeb 11, 1997
Nonvolatile semiconductor memory device with a row redundancy circuit
MITSUBISHI ELECTRIC CORP39 citations92
US5548557AAug 20, 1996
Nonvolatile semiconductor memory device with a row redundancy circuit
MITSUBISHI ELECTRIC CORP42 citations92
US5105384AApr 14, 1992
Low current semiconductor memory device
MITSUBISHI ELECTRIC CORP21 citations82
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
5 patentsUS7258549B2Aug 21, 2007
Connection member and mount assembly and production method of the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD61 citations98
US6691296B1Feb 10, 2004
Circuit board design aiding
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD73 citations97
US6188493B1Feb 13, 2001
Electronic blackboard device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations90
US7346051B2Mar 18, 2008
Slave device, master device and stacked device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US7120885B2Oct 10, 2006
Computer aided design apparatus for aiding design of a printed wiring board to effectively reduce noise
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
HITACHI LTD
5 patentsUS4531119AJul 23, 1985
Method and apparatus for key-inputting Kanji
HITACHI LTD69 citations94
US4543631ASep 24, 1985
Japanese text inputting system having interactive mnemonic mode and display choice mode
HITACHI LTD41 citations91
US9620272B2Apr 11, 2017
Superconducting magnet device
HITACHI LTD11 citations84
US10177621B2Jan 8, 2019
Rotating electric machine or wind power generation system
HITACHI LTD8 citations82
US7961067B2Jun 14, 2011
Superconducting magnet apparatus and magnetic resonance imaging apparatus
HITACHI LTD14 citations82
PANASONIC CORP
3 patentsBRIDGESTONE CORP
2 patents(unassigned)
1 patentTAIYO YUDEN KK
1 patentPANASONIC IP MAN CO LTD
1 patentKITAGAWA DAISAKU
1 patentRENESAS DEVICE DESIGN CORP
1 patentShowing the top 50 of 143 patents by PatentIndex Score.