Inventor

SCHULZE HOLGER

AT37 patents

⚠️ This page may combine multiple inventors who share the name “SCHULZE HOLGER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHULZE HOLGER

INFINEON TECHNOLOGIES AG

Semiconductor device and fabrication method suitable therefor

Method for forming a semiconductor device

Semiconductor device and fabrication method

Semiconductor device including a vertical edge termination structure and method of manufacturing

Vertical semiconductor device

Semiconductor devices with steep junctions and methods of manufacturing thereof

Semiconductor device with charge carrier lifetime reduction means

Semiconductor substrate having a bond pad material based on aluminum

Semiconductor devices with steep junctions and methods of manufacturing thereof

Method of manufacturing a semiconductor device having a vertical edge termination structure

Method of manufacturing a semiconductor device comprising field stop zone

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Semiconductor device having a surface with ripples

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor device with an insulation layer having a varying thickness

Power semiconductor device

Power semiconductor device

Semiconductor device including a field stop region

Semiconductor device with different contact regions

Semiconductor device and method for forming a semiconductor device

Power semiconductor device and method of producing a power semiconductor device

INFINEON TECHNOLOGIES AUSTRIA

Method for manufacturing a semiconductor substrate including laser annealing

Semiconductor device and fabrication method

Method of manufacturing a semiconductor device comprising a field stop zone at a specific depth

INFINEON TECHNOLOGIES AUSTRIA AG

Laser thermal annealing of deep doped region using structured antireflective coating

Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity

Semiconductor component and integrated circuit

MAUDER ANTON

Semiconductor device with trench structures including a recombination structure and a fill structure

Semiconductor device and fabrication method

SCHULZE HANS JOACHIM

Method for fabricating a doped zone in a semiconductor body

SIEMENS AG

Method for optimizing a controlled system parameter

HILLE FRANK

Method for fabricating a semiconductor having a graded pn junction

BASF AG

Method for producing a hydroxylation catalyst and the use thereof

ITI SCOTLAND LTD

Detecting analytes

DATAMEER INC

Apparatus and method for distributed query processing utilizing dynamically generated in-memory term maps

SCHULZE HOLGER

Detecting analytes