Inventor

CHANG CHE-LUN

TW21 patents

⚠️ This page may combine multiple inventors who share the name “CHANG CHE-LUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG CHE-LUN

TAIWAN SEMICONDUCTOR MFG CO LTD

Integrated circuit structure with backside dielectric layer having air gap

Germanium hump reduction

Integrated circuit structure with backside dielectric layer having air gap

Semiconductor devices including backside vias and methods of forming the same

Fin field-effect transistor device and method

Semiconductor device structure and method for forming the same

Semiconductor devices including backside vias and methods of forming the same

Integrated circuit structure with backside dielectric layer having air gap

Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration

CMP process and methods thereof

Semiconductor devices including backside vias and methods of forming the same

Inner spacer structure and methods of forming such

Fin field-effect transistor device and method

Dielectric layer, interconnection structure using the same, and manufacturing method thereof

Germanium hump reduction

CMP process and methods thereof

Dielectric layer, interconnection structure using the same, and manufacturing method thereof

Method of forming a gap under a source/drain feature of a multi-gate device

Methods of manufacturing semiconductor devices and semiconductor devices

FED CORPORATION

Tire tread

Tire tread