Inventor

JANG BI

KR3 patents

⚠️ This page may combine multiple inventors who share the name “JANG BI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

2 patents

US7910491B2Mar 22, 2011

Gapfill improvement with low etch rate dielectric liners

APPLIED MATERIALS INC90 citations95

US7754610B2Jul 13, 2010

Process for etching tungsten silicide overlying polysilicon particularly in a flash memory

APPLIED MATERIALS INC2 citations59

(unassigned)

1 patent

US6756313B2Jun 29, 2004

Method of etching silicon nitride spacers with high selectivity relative to oxide in a high density plasma chamber

22 citations89