Inventor

ZHANG YONGXI

US20 patents

⚠️ This page may combine multiple inventors who share the name “ZHANG YONGXI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHANG YONGXI

TEXAS INSTRUMENTS INC

Diluted drift layer with variable stripe widths for power transistors

Integrated high-side driver for P-N bimodal power device

Reduced area power devices using deep trench isolation

Transistor having double isolation with one floating isolation

High voltage multiple channel LDMOS

Integrated high-side driver for P-N bimodal power device

Structures to avoid floating resurf layer in high voltage lateral devices

P-N bimodal transistors

Structures to avoid floating RESURF layer in high voltage lateral devices

P-N bimodal conduction resurf LDMOS

Reduced area power devices using deep trench isolation

Stacked ESD clamp with reduced variation in clamp voltage

Diluted drift layer with variable stripe widths for power transistors

High voltage multiple channel LDMOS

Diluted drift layer with variable stripe widths for power transistors

Deep trench isolation with tank contact grounding

Deep trench isolation with tank contact grounding

PENDHARKAR SAMEER P

Stacked ESD clamp with reduced variation in clamp voltage

INVENTCHIP TECH CO LTD

Trench gate power MOSFET and manufacturing method therefor

UNIV CHANGSHA SCI & TECH

Hierarchical energy management for community microgrids with integration of second-life battery energy storage systems and photovoltaic solar energy