Inventor

CHEN YANGYIN

BE23 patents

⚠️ This page may combine multiple inventors who share the name “CHEN YANGYIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN YANGYIN

SANDISK TECHNOLOGIES LLC

Three-dimensional ferroelectric memory device and method of making thereof

Three-level ferroelectric memory cell using band alignment engineering

Three-dimensional flat inverse NAND memory device and method of making the same

Interfacial tilt-resistant bonded assembly and methods for forming the same

Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same

Bonded die assembly containing partially filled through-substrate via structures and methods for making the same

Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer

Methods and apparatus for three-dimensional nonvolatile memory

Bonded assembly including inter-die via structures and methods for making the same

Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners

Wordline sidewall recess for integrating planar selector device

Ferroelectric non-volatile memory

Bonded assembly containing laterally bonded bonding pads and methods of forming the same

Ferroelectric non-volatile memory

Ferroelectric non-volatile memory

Ferroelectric non-volatile memory

Bonded assembly including interconnect-level bonding pads and methods of forming the same

Semiconductor die containing silicon nitride stress compensating regions and method for making the same

Embedded bonded assembly and method for making the same

Device with sub-minimum pitch and method of making

Implementation of VMCO area switching cell to VBL architecture

Three-dimensional memory device including germanium-containing vertical channels and method of making the same

SANDISK TECHNOLOGIES INC

Implementation of VMCO area switching cell to VBL architecture