Inventor
CHAO YI-HSIANG
TW16 patents
⚠️ This page may combine multiple inventors who share the name “CHAO YI-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11107690B2Aug 31, 2021
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10685842B2Jun 16, 2020
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US11901183B2Feb 13, 2024
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11295956B2Apr 5, 2022
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11011611B2May 18, 2021
Semiconductor device with low resistivity contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12512324B2Dec 30, 2025
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12417945B2Sep 16, 2025
Contact features of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12394625B2Aug 19, 2025
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11972951B2Apr 30, 2024
Selective formation of titanium silicide and titanium nitride by hydrogen gas control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12538776B2Jan 27, 2026
Methods for selectively removing material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11222818B2Jan 11, 2022
Formation method of semiconductor device structure with metal-semiconductor compound region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12272600B2Apr 8, 2025
Contact features of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12456617B2Oct 28, 2025
Semiconductor device pre-cleaning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10700177B2Jun 30, 2020
Semiconductor device with low resistivity contact structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50