P

Inventor

WOO DONGSOO

KR37 patents
⚠️ This page may combine multiple inventors who share the name “WOO DONGSOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

36 patents
US10535659B2Jan 14, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US8012828B2Sep 6, 2011

Recess gate transistor

SAMSUNG ELECTRONICS CO LTD23 citations91
US11195836B2Dec 7, 2021

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10861854B2Dec 8, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD9 citations84
US10312243B2Jun 4, 2019

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US9673276B2Jun 6, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US11616065B2Mar 28, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US10886375B2Jan 5, 2021

Semiconductor device having buried gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations73
US9905659B2Feb 27, 2018

Semiconductor device having buried gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11380690B2Jul 5, 2022

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10964704B2Mar 30, 2021

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US10818672B2Oct 27, 2020

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11329050B2May 10, 2022

Semiconductor memory devices having contact plugs

SAMSUNG ELECTRONICS CO LTD3 citations71
US11508733B2Nov 22, 2022

Integrated circuit device with ion doped regions that provide dopant ions to gate dielectric film

SAMSUNG ELECTRONICS CO LTD2 citations69
US11189618B2Nov 30, 2021

Semiconductor memory device including work function adjusting layer in buried gate line and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations69
US12426271B2Sep 23, 2025

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12268042B2Apr 1, 2025

Variable resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12249651B2Mar 11, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11856753B2Dec 26, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11171038B2Nov 9, 2021

Fabrication method of integrated circuit semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12317507B2May 27, 2025

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11968823B2Apr 23, 2024

Semiconductor memory devices having contact plugs

SAMSUNG ELECTRONICS CO LTD0 citations61
US11862220B2Jan 2, 2024

Memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US9449677B2Sep 20, 2016

Methods of operating and forming semiconductor devices including dual-gate electrode structures

SAMSUNG ELECTRONICS CO LTD2 citations61
US12402321B2Aug 26, 2025

Vertical channel semiconductor device with ferroelectric-insulator gate stack

SAMSUNG ELECTRONICS CO LTD0 citations52
US12347778B2Jul 1, 2025

Semiconductor device and electronic system including the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12016188B2Jun 18, 2024

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US10263084B2Apr 16, 2019

Semiconductor device having buried gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12588251B2Mar 24, 2026

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12317504B2May 27, 2025

Semiconductor memory device including vertical cell structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12279435B2Apr 15, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12029029B2Jul 2, 2024

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations51
US12593431B2Mar 31, 2026

Semiconductor memory device of 2T-1C structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US12563811B2Feb 24, 2026

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12532478B2Jan 20, 2026

Semiconductor devices with improved performance and reliability and manufacturing methods for the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US12363890B2Jul 15, 2025

Semiconductor device including peripheral contact

SAMSUNG ELECTRONICS CO LTD0 citations46

KIM JUNSOO

1 patent