Inventor
OUYANG QIQING
US16 patents
⚠️ This page may combine multiple inventors who share the name “OUYANG QIQING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS7227205B2Jun 5, 2007
Strained-silicon CMOS device and method
IBM72 citations98
US7968915B2Jun 28, 2011
Dual stress memorization technique for CMOS application
IBM17 citations92
US7510904B2Mar 31, 2009
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
IBM22 citations92
US7375410B2May 20, 2008
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
IBM17 citations92
US7115965B2Oct 3, 2006
Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
IBM16 citations92
US7834399B2Nov 16, 2010
Dual stress memorization technique for CMOS application
IBM15 citations84
US7808081B2Oct 5, 2010
Strained-silicon CMOS device and method
IBM11 citations84
US7485537B2Feb 3, 2009
Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness
IBM12 citations83
US6812533B2Nov 2, 2004
SOI based bipolar transistor having a majority carrier accumulation layer as subcollector
IBM8 citations74
US7911024B2Mar 22, 2011
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
IBM6 citations73
US7763518B2Jul 27, 2010
Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof
IBM4 citations62
US7678634B2Mar 16, 2010
Local stress engineering for CMOS devices
IBM4 citations62
US7342294B2Mar 11, 2008
SOI bipolar transistors with reduced self heating
IBM5 citations61
US7915653B2Mar 29, 2011
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
IBM0 citations51