Inventor
MEIJER GERHARD INGMAR
CH32 patents
⚠️ This page may combine multiple inventors who share the name “MEIJER GERHARD INGMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
27 patentsUS7376006B2May 20, 2008
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
IBM138 citations97
US7560721B1Jul 14, 2009
Phase change material with filament electrode
IBM42 citations96
US7569459B2Aug 4, 2009
Nonvolatile programmable resistor memory cell
IBM53 citations94
US7324366B2Jan 29, 2008
Non-volatile memory architecture employing bipolar programmable resistance storage elements
IBM44 citations92
US7723714B2May 25, 2010
Programmable-resistance memory cell
IBM15 citations84
US7961493B2Jun 14, 2011
Programmable device
IBM8 citations82
US7579611B2Aug 25, 2009
Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
IBM7 citations74
US8377789B2Feb 19, 2013
Field-enhanced programmable resistance memory cell
IBM4 citations72
US7791141B2Sep 7, 2010
Field-enhanced programmable resistance memory cell
IBM5 citations72
US11846886B2Dec 19, 2023
Photoacid generator
IBM2 citations71
US12222987B1Feb 11, 2025
Performing a search using a hypergraph
IBM3 citations70
US7851323B2Dec 14, 2010
Phase change material with filament electrode
IBM3 citations63
US12306535B2May 20, 2025
Photoacid generator for chemically amplified photoresists for deep ultra violet and extreme ultraviolet lithography
IBM0 citations61
US12242190B2Mar 4, 2025
Photoacid generator for chemically amplified photoresists
IBM0 citations61
US12216402B2Feb 4, 2025
Photoacid generator
IBM0 citations61
US12135503B2Nov 5, 2024
Organometallic photoresists for DUV or EUV lithography
IBM0 citations61
US11315634B1Apr 26, 2022
Device comprising tunable resistive elements
IBM0 citations61
US7933483B2Apr 26, 2011
Electro-optical memory cell
IBM3 citations61
US7923263B2Apr 12, 2011
Non-volatile resistance switching memory
IBM1 citations61
US7897411B2Mar 1, 2011
Non-volatile resistance switching memory
IBM1 citations61
US7465952B2Dec 16, 2008
Programmable non-volatile resistance switching device
IBM3 citations59
US7724999B2May 25, 2010
Electro-optical device
IBM3 citations54
US8012793B2Sep 6, 2011
Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
IBM1 citations52
US7872901B2Jan 18, 2011
Programmable-resistance memory cell
IBM0 citations51
US7825486B2Nov 2, 2010
Memory cell and memory device
IBM1 citations51
US7897957B2Mar 1, 2011
Non-volatile resistance switching memory
IBM0 citations50
US12482540B2Nov 25, 2025
Synthetic data set generation of chemical illustrations
IBM0 citations46