Inventor
DORNEL ERWAN
FR24 patents
⚠️ This page may combine multiple inventors who share the name “DORNEL ERWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
Aledia
14 patentsUS10418506B2Sep 17, 2019
Light-emitting device with integrated light sensor
Aledia3 citations72
US9854632B2Dec 26, 2017
Optoelectronic circuit with low-flicker light-emitting diodes
Aledia5 citations72
US11489088B2Nov 1, 2022
Method for manufacturing an optoelectronic device with self-aligning light confinement walls
Aledia3 citations71
US10923528B2Feb 16, 2021
Optoelectronic device comprising pixels with improved contrast and brightness
Aledia4 citations70
US9960205B2May 1, 2018
Optoelectronic device comprising light-emitting diodes
Aledia5 citations70
US9876142B2Jan 23, 2018
Optoelectronic device comprising light-emitting diodes
Aledia2 citations70
US10411161B2Sep 10, 2019
Light-emitting device having a built-in light sensor
Aledia1 citations61
US11901482B2Feb 13, 2024
Method for manufacturing an optoelectronic device with self-aligning light confinement walls
Aledia0 citations60
US11769856B2Sep 26, 2023
Method for manufacturing an optoelectronic device with self-aligning light confinement walls
Aledia0 citations60
US10937777B2Mar 2, 2021
Opto-electronic device with light-emitting diodes
Aledia1 citations60
US11764196B2Sep 19, 2023
Optoelectronic device comprising light-emitting diodes
Aledia0 citations51
US10153399B2Dec 11, 2018
Optoelectronic device comprising semiconductor elements and its fabrication process
Aledia1 citations51
US11552126B2Jan 10, 2023
Optoelectronic device with electronic components at the level of the rear face of the substrate and manufacturing method
Aledia0 citations50
US11362137B2Jun 14, 2022
Optoelectronic device comprising a matrix of three-dimensional diodes
Aledia0 citations49
IBM
4 patentsUS8901654B1Dec 2, 2014
Semiconductor-on-insulator (SOI) field effect transistor with buried epitaxial active regions
IBM2 citations62
US8735959B2May 27, 2014
Non-volatile memory device formed by dual floating gate deposit
IBM3 citations62
US8928051B2Jan 6, 2015
Metal oxide semiconductor (MOS) device with locally thickened gate oxide
IBM0 citations51
US9659781B2May 23, 2017
Method for forming a floating gate in a recess of a shallow trench isolation (STI) region
IBM0 citations41
DORNEL ERWAN
3 patentsUS8664059B2Mar 4, 2014
Non-volatile memory device formed by dual floating gate deposit
DORNEL ERWAN3 citations60
US8741704B2Jun 3, 2014
Metal oxide semiconductor (MOS) device with locally thickened gate oxide
DORNEL ERWAN1 citations48
US8252636B2Aug 28, 2012
Method of manufacturing nanowires parallel to the supporting substrate
DORNEL ERWAN0 citations39