Inventor
WENXU XIANYU
KR16 patents
⚠️ This page may combine multiple inventors who share the name “WENXU XIANYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS9056424B2Jun 16, 2015
Methods of transferring graphene and manufacturing device using the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9722068B2Aug 1, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US9773802B2Sep 26, 2017
Method of fabricating synapse memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US9515189B2Dec 6, 2016
Semiconductor device and manufacturing method of semiconductor device using metal oxide
SAMSUNG ELECTRONICS CO LTD0 citations51
US9337029B2May 10, 2016
Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US9184052B2Nov 10, 2015
Semiconductor device and manufacturing method of semiconductor device using metal oxide
SAMSUNG ELECTRONICS CO LTD1 citations51
US9029860B2May 12, 2015
Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US10541178B2Jan 21, 2020
Method and device for evaluating quality of thin film layer
SAMSUNG ELECTRONICS CO LTD0 citations49
US10815569B2Oct 27, 2020
Shower head of combinatorial spatial atomic layer deposition apparatus
SAMSUNG ELECTRONICS CO LTD0 citations39
WENXU XIANYU
3 patentsUS8632855B2Jan 21, 2014
Methods of preparing a graphene sheet
WENXU XIANYU8 citations82
US8748969B2Jun 10, 2014
Non-volatile memory device including dummy electrodes and method of fabricating the same
WENXU XIANYU3 citations60
US8921220B2Dec 30, 2014
Selective low-temperature ohmic contact formation method for group III-nitride heterojunction structured device
WENXU XIANYU1 citations50