Inventor
CHAN WEI MIN
TW86 patents
⚠️ This page may combine multiple inventors who share the name “CHAN WEI MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS9129707B2Sep 8, 2015
Dual port SRAM with dummy read recovery
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US11417370B2Aug 16, 2022
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10503421B2Dec 10, 2019
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10411019B2Sep 10, 2019
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10176864B2Jan 8, 2019
Static random access memory circuits
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10153035B2Dec 11, 2018
SRAM-based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9704565B2Jul 11, 2017
Method of using a static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9171849B2Oct 27, 2015
Three dimensional dual-port bit cell and method of using same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9093176B2Jul 28, 2015
Power line lowering for write assisted control scheme
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9075936B2Jul 7, 2015
Pre-colored methodology of multiple patterning
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9029230B2May 12, 2015
Conductive line routing for multi-patterning technology
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11790958B2Oct 17, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11301148B2Apr 12, 2022
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11196574B2Dec 7, 2021
Physically unclonable function (PUF) generation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11043264B2Jun 22, 2021
Static random access memory method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10949100B2Mar 16, 2021
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10783954B2Sep 22, 2020
Semiconductor memory with respective power voltages for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10770134B2Sep 8, 2020
SRAM based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10685704B2Jun 16, 2020
Static random access memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10439827B2Oct 8, 2019
SRAM-based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9275710B2Mar 1, 2016
Three dimensional cross-access dual-port bit cell design
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11100964B1Aug 24, 2021
Multi-stage bit line pre-charge
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11048840B2Jun 29, 2021
Method for eliminating false paths of a circuit unit to be implemented using a system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10275561B2Apr 30, 2019
Method for eliminating false paths of a circuit unit to be implemented using a system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9753895B2Sep 5, 2017
Method for process variation analysis of an integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations71
US10083257B2Sep 25, 2018
Method, system and computer program product for generating simulation sample
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations69
US12300605B2May 13, 2025
Reducing internal node loading in combination circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12245412B2Mar 4, 2025
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12165731B2Dec 10, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854970B2Dec 26, 2023
Reducing internal node loading in combination circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11778802B2Oct 3, 2023
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11610628B2Mar 21, 2023
Static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11574674B2Feb 7, 2023
SRAM based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11450605B2Sep 20, 2022
Reducing internal node loading in combination circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11264088B2Mar 1, 2022
Semiconductor memory with respective power voltages for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11024633B2Jun 1, 2021
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12548619B2Feb 10, 2026
Device and circuit with voltage suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11675505B2Jun 13, 2023
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9208858B1Dec 8, 2015
Static random access memory with assist circuit
TAIWAN SEMICONDUCTOR MFG70 citations98
US9281056B2Mar 8, 2016
Static random access memory and method of using the same
TAIWAN SEMICONDUCTOR MFG5 citations84
US7952939B2May 31, 2011
Circuit and method for VDD-tracking CVDD voltage supply
TAIWAN SEMICONDUCTOR MFG8 citations84
CHEN YEN-HUEI
2 patentsCHAN WEI MIN
2 patentsLEE CHENG HUNG
1 patentSCHWARTZ EVAN L
1 patentLIN CHIH-YU
1 patentWANG LI-WEN
1 patentAPPLIED MATERIALS INC
1 patentShowing the top 50 of 86 patents by PatentIndex Score.