P

Inventor

TSAI JUI-CHE

TW48 patents
⚠️ This page may combine multiple inventors who share the name “TSAI JUI-CHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

37 patents
US10164640B1Dec 25, 2018

Method and device to speed-up leakage based PUF generators under extreme operation conditions

TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US11528151B2Dec 13, 2022

Physically unclonable function (PUF) generation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11049555B1Jun 29, 2021

SRAM power-up random number generator

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11810635B2Nov 7, 2023

Sense amplifier for coupling effect reduction

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11626157B2Apr 11, 2023

SRAM power-up random number generator

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11601117B1Mar 7, 2023

Sense amplifier for coupling effect reduction

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11238908B2Feb 1, 2022

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11195567B2Dec 7, 2021

Balanced negative bitline voltage for a write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10972292B2Apr 6, 2021

I/O circuit design for SRAM-based PUF generators

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9583181B1Feb 28, 2017

SRAM device capable of working in multiple low voltages without loss of performance

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11903188B2Feb 13, 2024

Memory devices, semiconductor devices, and methods of operating a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12445312B2Oct 14, 2025

I/O circuit design for SRAM-based PUF generators

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12260904B2Mar 25, 2025

Memory device with additional write bit lines

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12254923B2Mar 18, 2025

Nonvolatile SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12087345B2Sep 10, 2024

Balanced negative bitline voltage for a write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11949799B2Apr 2, 2024

I/O circuit design for SRAM-based PUF generators

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11545218B2Jan 3, 2023

Nonvolatile SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11532351B2Dec 20, 2022

Memory device with additional write bit lines

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11200924B2Dec 14, 2021

Method of minimizing read-disturb-write effect of SRAM circuit and SRAM circuit thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10818327B2Oct 27, 2020

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10666438B2May 26, 2020

Balanced coupling structure for physically unclonable function (PUF) application

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12380950B2Aug 5, 2025

Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12284804B2Apr 22, 2025

Memory devices, semiconductor devices, and methods of operations a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190945B2Jan 7, 2025

SRAM power-up random number generator

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190986B2Jan 7, 2025

Sense amplifier for coupling effect reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12022014B2Jun 25, 2024

Physically unclonable function (PUF) generation

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11984164B2May 14, 2024

Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11657873B2May 23, 2023

Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189342B2Nov 30, 2021

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107530B2Aug 31, 2021

Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978144B2Apr 13, 2021

Integrated circuit and operating method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10770135B2Sep 8, 2020

Memory macro which changes operational modes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10511309B1Dec 17, 2019

Method and device to speed-up leakage based PUF generators under extreme operation conditions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10186313B2Jan 22, 2019

Memory macro disableable input-output circuits and methods of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865335B2Jan 9, 2018

SRAM device capable of working in multiple low voltages without loss of performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9589885B2Mar 7, 2017

Device having multiple-layer pins in memory MUX1 layout

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9490005B2Nov 8, 2016

Memory circuit and method for routing the memory circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

4 patents

UNIV CALIFORNIA

2 patents

CALIFORNIA INST OF TECHN

1 patent

LEE CHENG HUNG

1 patent

WU CHING-WEI

1 patent

VOLVO CAR CORP

1 patent

HON HAI PREC IND CO LTD

1 patent