Inventor
TSAI JUI-CHE
TW48 patents
⚠️ This page may combine multiple inventors who share the name “TSAI JUI-CHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
37 patentsUS10164640B1Dec 25, 2018
Method and device to speed-up leakage based PUF generators under extreme operation conditions
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US11528151B2Dec 13, 2022
Physically unclonable function (PUF) generation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11049555B1Jun 29, 2021
SRAM power-up random number generator
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11810635B2Nov 7, 2023
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11626157B2Apr 11, 2023
SRAM power-up random number generator
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11601117B1Mar 7, 2023
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11238908B2Feb 1, 2022
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11195567B2Dec 7, 2021
Balanced negative bitline voltage for a write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10972292B2Apr 6, 2021
I/O circuit design for SRAM-based PUF generators
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9583181B1Feb 28, 2017
SRAM device capable of working in multiple low voltages without loss of performance
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11903188B2Feb 13, 2024
Memory devices, semiconductor devices, and methods of operating a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12445312B2Oct 14, 2025
I/O circuit design for SRAM-based PUF generators
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12260904B2Mar 25, 2025
Memory device with additional write bit lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12254923B2Mar 18, 2025
Nonvolatile SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12087345B2Sep 10, 2024
Balanced negative bitline voltage for a write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11949799B2Apr 2, 2024
I/O circuit design for SRAM-based PUF generators
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11545218B2Jan 3, 2023
Nonvolatile SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11532351B2Dec 20, 2022
Memory device with additional write bit lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11200924B2Dec 14, 2021
Method of minimizing read-disturb-write effect of SRAM circuit and SRAM circuit thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10818327B2Oct 27, 2020
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10666438B2May 26, 2020
Balanced coupling structure for physically unclonable function (PUF) application
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12380950B2Aug 5, 2025
Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12284804B2Apr 22, 2025
Memory devices, semiconductor devices, and methods of operations a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190945B2Jan 7, 2025
SRAM power-up random number generator
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190986B2Jan 7, 2025
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12022014B2Jun 25, 2024
Physically unclonable function (PUF) generation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11984164B2May 14, 2024
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11657873B2May 23, 2023
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189342B2Nov 30, 2021
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107530B2Aug 31, 2021
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978144B2Apr 13, 2021
Integrated circuit and operating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10770135B2Sep 8, 2020
Memory macro which changes operational modes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10511309B1Dec 17, 2019
Method and device to speed-up leakage based PUF generators under extreme operation conditions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10186313B2Jan 22, 2019
Memory macro disableable input-output circuits and methods of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865335B2Jan 9, 2018
SRAM device capable of working in multiple low voltages without loss of performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9589885B2Mar 7, 2017
Device having multiple-layer pins in memory MUX1 layout
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9490005B2Nov 8, 2016
Memory circuit and method for routing the memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
4 patentsUS9001611B1Apr 7, 2015
Three-dimensional two port register file
TAIWAN SEMICONDUCTOR MFG9 citations84
US9230622B2Jan 5, 2016
Simultaneous two/dual port access on 6T SRAM
TAIWAN SEMICONDUCTOR MFG5 citations71
US9275724B2Mar 1, 2016
Method of writing to and reading data from a three-dimensional two port register file
TAIWAN SEMICONDUCTOR MFG1 citations52
US9129956B2Sep 8, 2015
Device having multiple-layer pins in memory MUX1 layout
TAIWAN SEMICONDUCTOR MFG0 citations52