Inventor
SU SHIH-TZUNG
TW13 patents
⚠️ This page may combine multiple inventors who share the name “SU SHIH-TZUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MAXPOWER SEMICONDUCTOR INC
9 patentsUS9093522B1Jul 28, 2015
Vertical power MOSFET with planar channel and vertical field plate
MAXPOWER SEMICONDUCTOR INC60 citations97
US7923804B2Apr 12, 2011
Edge termination with improved breakdown voltage
MAXPOWER SEMICONDUCTOR INC13 citations84
US9761702B2Sep 12, 2017
Power MOSFET having planar channel, vertical current path, and top drain electrode
MAXPOWER SEMICONDUCTOR INC6 citations83
US9461127B2Oct 4, 2016
Vertical power MOSFET having planar channel and its method of fabrication
MAXPOWER SEMICONDUCTOR INC6 citations83
US9184248B2Nov 10, 2015
Vertical power MOSFET having planar channel and its method of fabrication
MAXPOWER SEMICONDUCTOR INC6 citations83
US9947779B2Apr 17, 2018
Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage
MAXPOWER SEMICONDUCTOR INC2 citations72
US10157983B2Dec 18, 2018
Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands
MAXPOWER SEMICONDUCTOR INC4 citations71
US12057482B2Aug 6, 2024
MOSFET with distributed doped P-shield zones under trenches
MAXPOWER SEMICONDUCTOR INC0 citations52
US11289596B2Mar 29, 2022
Split gate power device and its method of fabrication
MAXPOWER SEMICONDUCTOR INC0 citations51