Inventor
NAPETSCHNIG EVELYN
AT24 patents
⚠️ This page may combine multiple inventors who share the name “NAPETSCHNIG EVELYN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
20 patentsUS10115688B2Oct 30, 2018
Solder metallization stack and methods of formation thereof
INFINEON TECHNOLOGIES AG2 citations70
US11424201B2Aug 23, 2022
Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device
INFINEON TECHNOLOGIES AG0 citations61
US10262959B2Apr 16, 2019
Semiconductor devices and methods of forming thereof
INFINEON TECHNOLOGIES AG1 citations61
US9484316B2Nov 1, 2016
Semiconductor devices and methods of forming thereof
INFINEON TECHNOLOGIES AG2 citations61
US11367654B2Jun 21, 2022
Component and method of manufacturing a component using an ultrathin carrier
INFINEON TECHNOLOGIES AG1 citations60
US12040288B2Jul 16, 2024
Chip package and method of forming a chip package
INFINEON TECHNOLOGIES AG0 citations59
US11776927B2Oct 3, 2023
Semiconductor device including a solder compound containing a compound Sn/Sb
INFINEON TECHNOLOGIES AG0 citations59
US11735534B2Aug 22, 2023
Chip package and method of forming a chip package
INFINEON TECHNOLOGIES AG0 citations59
US11615963B2Mar 28, 2023
Electronic device, electronic module and methods for fabricating the same
INFINEON TECHNOLOGIES AG0 citations59
US11069644B2Jul 20, 2021
Semiconductor device including a solder compound containing a compound Sn/Sb
INFINEON TECHNOLOGIES AG0 citations59
US10930614B2Feb 23, 2021
Chip arrangements
INFINEON TECHNOLOGIES AG0 citations59
US10741402B2Aug 11, 2020
Electronic device, electronic module and methods for fabricating the same
INFINEON TECHNOLOGIES AG1 citations59
US12183696B2Dec 31, 2024
Semiconductor device including bonding pad metal layer structure
INFINEON TECHNOLOGIES AG0 citations58
US11764176B2Sep 19, 2023
Semiconductor device including bonding pad metal layer structure
INFINEON TECHNOLOGIES AG0 citations58
US11410950B2Aug 9, 2022
Semiconductor substrate having a bond pad material based on aluminum
INFINEON TECHNOLOGIES AG0 citations53
US8866299B2Oct 21, 2014
Backside processing of semiconductor devices
INFINEON TECHNOLOGIES AG0 citations50
US10573611B2Feb 25, 2020
Solder metallization stack and methods of formation thereof
INFINEON TECHNOLOGIES AG0 citations47
US10276362B2Apr 30, 2019
Method for processing a semiconductor region and an electronic device
INFINEON TECHNOLOGIES AG0 citations42
US10914018B2Feb 9, 2021
Porous Cu on Cu surface for semiconductor packages
INFINEON TECHNOLOGIES AG0 citations41
US9627335B2Apr 18, 2017
Method for processing a semiconductor workpiece and semiconductor workpiece
INFINEON TECHNOLOGIES AG0 citations35