P

Inventor

LIU SIYANG

CN30 patents
⚠️ This page may combine multiple inventors who share the name “LIU SIYANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNIV SOUTHEAST

16 patents
US9240469B2Jan 19, 2016

Transverse ultra-thin insulated gate bipolar transistor having high current density

UNIV SOUTHEAST190 citations98
US12051742B1Jul 30, 2024

Enhancement-mode N-channel and P-channel GaN device integration structure

UNIV SOUTHEAST5 citations72
US11158708B1Oct 26, 2021

Graphene channel silicon carbide power semiconductor transistor

UNIV SOUTHEAST4 citations71
US12046594B1Jul 23, 2024

Monolithically integrated GaN-based half-bridge circuit and half-bridge circuit

UNIV SOUTHEAST2 citations67
US10340906B2Jul 2, 2019

Integrated bootstrap high-voltage driver chip and technological structure thereof

UNIV SOUTHEAST1 citations58
US9159818B2Oct 13, 2015

High-current N-type silicon-on-insulator lateral insulated-gate bipolar transistor

UNIV SOUTHEAST1 citations51
US12224340B2Feb 11, 2025

Heterojunction semiconductor device with low on-resistance

UNIV SOUTHEAST0 citations50
US12382707B1Aug 5, 2025

Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof

UNIV SOUTHEAST0 citations49
US11322606B2May 3, 2022

Heterojunction semiconductor device having high blocking capability

UNIV SOUTHEAST0 citations49
US12366614B2Jul 22, 2025

Horizontal hall device and preparation method

UNIV SOUTHEAST0 citations48
US12183818B2Dec 31, 2024

Power semiconductor device and manufacturing method therefor

UNIV SOUTHEAST0 citations48
US11515395B2Nov 29, 2022

Gallium nitride power device and manufacturing method thereof

UNIV SOUTHEAST0 citations48
US11894458B2Feb 6, 2024

Lateral double-diffused metal oxide semiconductor field effect transistor

UNIV SOUTHEAST0 citations47
US12107167B2Oct 1, 2024

High-threshold power semiconductor device and manufacturing method thereof

UNIV SOUTHEAST0 citations46
US12027516B1Jul 2, 2024

GaN power semiconductor device integrated with self-feedback gate control structure

UNIV SOUTHEAST0 citations46
US10056313B2Aug 21, 2018

Power module of square flat pin-free packaging structure

UNIV SOUTHEAST0 citations40

SHENZHEN CHINA STAR OPTOELECT

5 patents

UNIV NANKAI

2 patents

SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD

2 patents

BGI GENOMICS CO LTD

1 patent

UNIV CORNELL

1 patent

UNIV SHANGHAI JIAOTONG

1 patent

WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD

1 patent

Hubei Jiufengshan Laboratory

1 patent