Inventor
LIAO CHIN-I
TW36 patents
⚠️ This page may combine multiple inventors who share the name “LIAO CHIN-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
14 patentsUS9123744B1Sep 1, 2015
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP21 citations92
US9337193B2May 10, 2016
Semiconductor device with epitaxial structures
UNITED MICROELECTRONICS CORP12 citations84
US9064893B2Jun 23, 2015
Gradient dopant of strained substrate manufacturing method of semiconductor device
UNITED MICROELECTRONICS CORP7 citations84
US9006805B2Apr 14, 2015
Semiconductor device
UNITED MICROELECTRONICS CORP14 citations84
US7736982B2Jun 15, 2010
Method for forming a semiconductor device
UNITED MICROELECTRONICS CORP12 citations84
US9070635B2Jun 30, 2015
Removing method
UNITED MICROELECTRONICS CORP6 citations73
US9112030B2Aug 18, 2015
Epitaxial structure and process thereof for non-planar transistor
UNITED MICROELECTRONICS CORP2 citations63
US8928126B2Jan 6, 2015
Epitaxial layer
UNITED MICROELECTRONICS CORP2 citations63
US8884346B2Nov 11, 2014
Semiconductor structure
UNITED MICROELECTRONICS CORP0 citations52
US8853740B2Oct 7, 2014
Strained silicon channel semiconductor structure
UNITED MICROELECTRONICS CORP0 citations52
US7858529B2Dec 28, 2010
Treatment method of semiconductor, method for manufacturing MOS, and MOS structure
UNITED MICROELECTRONICS CORP0 citations52
US7560350B2Jul 14, 2009
Method for forming strained semiconductor device and method for forming source/drain region
UNITED MICROELECTRONICS CORP0 citations52
US8999793B2Apr 7, 2015
Multi-gate field-effect transistor process
UNITED MICROELECTRONICS CORP0 citations50
US8927376B2Jan 6, 2015
Semiconductor device and method of forming epitaxial layer
UNITED MICROELECTRONICS CORP0 citations50
LIAO CHIN-I
12 patentsUSD421650SMar 14, 2000
Electrical fan
LIAO CHIN-I24 citations92
US8796695B2Aug 5, 2014
Multi-gate field-effect transistor and process thereof
LIAO CHIN-I18 citations90
US8754448B2Jun 17, 2014
Semiconductor device having epitaxial layer
LIAO CHIN-I18 citations90
US8647953B2Feb 11, 2014
Method for fabricating first and second epitaxial cap layers
LIAO CHIN-I17 citations83
US8674433B2Mar 18, 2014
Semiconductor process
LIAO CHIN-I8 citations81
US8440511B1May 14, 2013
Method for manufacturing multi-gate transistor device
LIAO CHIN-I5 citations68
US8962433B2Feb 24, 2015
MOS transistor process
LIAO CHIN-I0 citations52
US8664069B2Mar 4, 2014
Semiconductor structure and process thereof
LIAO CHIN-I1 citations52
US8481391B2Jul 9, 2013
Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structure
LIAO CHIN-I0 citations51
US8716750B2May 6, 2014
Semiconductor device having epitaxial structures
LIAO CHIN-I1 citations50
US8709910B2Apr 29, 2014
Semiconductor process
LIAO CHIN-I0 citations50
US8519390B2Aug 27, 2013
Test pattern for measuring semiconductor alloys using X-ray Diffraction
LIAO CHIN-I1 citations50
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS9450047B1Sep 20, 2016
Semiconductor structure having enlarged regrowth regions and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations91
US9620503B1Apr 11, 2017
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9614085B2Apr 4, 2017
Semiconductor structure having enlarged regrowth regions and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9543439B2Jan 10, 2017
Semiconductor device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9553191B1Jan 24, 2017
Fin field effect transistor and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48