Inventor
SAHIN TURGUT
US27 patents
Patents
27 patentsUS6624064B1Sep 23, 2003
Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
APPLIED MATERIALS INC583 citations99
US6465051B1Oct 15, 2002
Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
APPLIED MATERIALS INC221 citations99
US5882424AMar 16, 1999
Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
APPLIED MATERIALS INC325 citations99
US6454860B2Sep 24, 2002
Deposition reactor having vaporizing, mixing and cleaning capabilities
APPLIED MATERIALS INC692 citations98
US6204203B1Mar 20, 2001
Post deposition treatment of dielectric films for interface control
APPLIED MATERIALS INC271 citations98
US6136685AOct 24, 2000
High deposition rate recipe for low dielectric constant films
APPLIED MATERIALS INC343 citations98
US6121161ASep 19, 2000
Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
APPLIED MATERIALS INC119 citations98
US6379466B1Apr 30, 2002
Temperature controlled gas distribution plate
APPLIED MATERIALS INC468 citations97
US6383954B1May 7, 2002
Process gas distribution for forming stable fluorine-doped silicate glass and other films
APPLIED MATERIALS INC90 citations96
US6323119B1Nov 27, 2001
CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application
APPLIED MATERIALS INC59 citations96
US6387761B1May 14, 2002
Anneal for enhancing the electrical characteristic of semiconductor devices
APPLIED MATERIALS INC74 citations95
US6211065B1Apr 3, 2001
Method of depositing and amorphous fluorocarbon film using HDP-CVD
APPLIED MATERIALS INC100 citations95
US6200911B1Mar 13, 2001
Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
APPLIED MATERIALS INC57 citations95
US6037235AMar 14, 2000
Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices
APPLIED MATERIALS INC52 citations95
US5976993ANov 2, 1999
Method for reducing the intrinsic stress of high density plasma films
APPLIED MATERIALS INC53 citations95
US6450116B1Sep 17, 2002
Apparatus for exposing a substrate to plasma radicals
APPLIED MATERIALS INC114 citations94
US5201990AApr 13, 1993
Process for treating aluminum surfaces in a vacuum apparatus
APPLIED MATERIALS INC23 citations93
US7250309B2Jul 31, 2007
Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
APPLIED MATERIALS INC39 citations92
US6579811B2Jun 17, 2003
Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps through wafer heating
APPLIED MATERIALS INC19 citations92
US6518203B2Feb 11, 2003
Method and apparatus for integrating a metal nitride film in a semiconductor device
APPLIED MATERIALS INC18 citations92
US6337289B1Jan 8, 2002
Method and apparatus for integrating a metal nitride film in a semiconductor device
APPLIED MATERIALS INC38 citations92
US5811356ASep 22, 1998
Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning
APPLIED MATERIALS INC48 citations92
US5626678AMay 6, 1997
Non-conductive alignment member for uniform plasma processing of substrates
APPLIED MATERIALS INC37 citations92
US6375744B2Apr 23, 2002
Sequential in-situ heating and deposition of halogen-doped silicon oxide
APPLIED MATERIALS INC17 citations91
US6228781B1May 8, 2001
Sequential in-situ heating and deposition of halogen-doped silicon oxide
APPLIED MATERIALS INC25 citations91
US6218300B1Apr 17, 2001
Method and apparatus for forming a titanium doped tantalum pentaoxide dielectric layer using CVD
APPLIED MATERIALS INC15 citations82
US7294205B1Nov 13, 2007
Method for reducing the intrinsic stress of high density plasma films
APPLIED MATERIALS INC8 citations72