Inventor
JUNG DEOK-YOUNG
KR28 patents
⚠️ This page may combine multiple inventors who share the name “JUNG DEOK-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS9070748B2Jun 30, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6034833AMar 7, 2000
Record/reproduction controlling signal generator with an error preventing circuit having an automatic level control circuit
SAMSUNG ELECTRONICS CO LTD7 citations73
US10825766B2Nov 3, 2020
Semiconductor device with multi-layered wiring and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US9287251B2Mar 15, 2016
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US12255094B2Mar 18, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations63
US10847454B2Nov 24, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US10510658B2Dec 17, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US8691692B2Apr 8, 2014
Semiconductor chips and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US10804145B2Oct 13, 2020
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations61
US9831164B2Nov 28, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US12308320B2May 20, 2025
Semiconductor device and method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10916437B2Feb 9, 2021
Methods of forming micropatterns and substrate processing apparatus
SAMSUNG ELECTRONICS CO LTD0 citations51
US8710650B2Apr 29, 2014
Semiconductor devices having through electrodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US10096549B2Oct 9, 2018
Semiconductor devices having interconnection structure
SAMSUNG ELECTRONICS CO LTD0 citations40
PARK BYUNG-LYUL
4 patentsUS8076234B1Dec 13, 2011
Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structure
PARK BYUNG-LYUL40 citations92
US9018768B2Apr 28, 2015
Integrated circuit having through silicon via structure with minimized deterioration
PARK BYUNG-LYUL10 citations83
US8592310B2Nov 26, 2013
Methods of manufacturing a semiconductor device
PARK BYUNG-LYUL18 citations83
US8847399B2Sep 30, 2014
Semiconductor device and method of fabricating the same
PARK BYUNG-LYUL2 citations62
MOON KWANG-JIN
3 patentsUS8390120B2Mar 5, 2013
Semiconductor device and method of fabricating the same
MOON KWANG-JIN29 citations91
US9530726B2Dec 27, 2016
Semiconductor device and method of fabricating the same
MOON KWANG-JIN2 citations61
US8497157B2Jul 30, 2013
Method of manufacturing a semiconductor device and method of manufacturing a semiconductor package including the same
MOON KWANG-JIN1 citations51
JUNG DEOK-YOUNG
3 patentsUS8546256B2Oct 1, 2013
Method of forming semiconductor device
JUNG DEOK-YOUNG7 citations83
US8963336B2Feb 24, 2015
Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
JUNG DEOK-YOUNG12 citations82
US9064941B2Jun 23, 2015
Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
JUNG DEOK-YOUNG5 citations71