Inventor

KIM HONG-GUN

KR26 patents

⚠️ This page may combine multiple inventors who share the name “KIM HONG-GUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM HONG-GUN

SAMSUNG ELECTRONICS CO LTD

Method of forming an insulating layer in a trench isolation type semiconductor device

Semiconductor device isolation structures and methods of fabricating such structures

Method for forming a silicon oxide layer using spin-on glass

Method of forming a spin-on-glass insulation layer

Method of forming a spin-on-glass insulation layer

Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same

Oxide film, integrated circuit device, and methods of forming the same

Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same

Semiconductor device including a plurality of electrodes and supporters

Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device

Methods of fabricating semiconductor devices with electrode support patterns

Method for forming a silicon oxide layer using spin-on glass

Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same

Flash memory device and method of fabricating the same

Method of manufacturing a semiconductor device

Semiconductor device including a plurality of electrodes and supporters

Semiconductor device including a plurality of electrodes and supporters

Methods of filling gaps by deposition on materials having different deposition rates

Semiconductor device including a plurality of electrodes and supporters

Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same

Semiconductor device including supporters on a lower electrode thereof and method of fabricating the same

Methods of forming semiconductor devices having multilayer isolation structures

Methods of reducing impurity concentration in isolating films in semiconductor devices

UNIV JEONJU IND UNIV COOP

Metal nanoparticles impregnated activated carbon fiber for removing harmful substances, and method of manufacturing same

Method of preparing nanocomposite material plated with network-type metal layer through silica self-cracks and wearable electronics carbon fiber prepared therefrom

CHOI YONG-SOON

Methods of fabricating semiconductor devices having various isolation regions