Inventor
SCHNABLE GEORGE L
US19 patents
⚠️ This page may combine multiple inventors who share the name “SCHNABLE GEORGE L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RCA CORP
15 patentsUS4584026AApr 22, 1986
Ion-implantation of phosphorus, arsenic or boron by pre-amorphizing with fluorine ions
RCA CORP91 citations96
US4196232AApr 1, 1980
Method of chemically vapor-depositing a low-stress glass layer
RCA CORP75 citations95
US4269654AMay 26, 1981
Silicon nitride and silicon oxide etchant
RCA CORP71 citations94
US4395304AJul 26, 1983
Selective etching of phosphosilicate glass
RCA CORP43 citations92
US4249960AFeb 10, 1981
Laser rounding a sharp semiconductor projection
RCA CORP40 citations92
US4668973AMay 26, 1987
Semiconductor device passivated with phosphosilicate glass over silicon nitride
RCA CORP21 citations81
US4278508AJul 14, 1981
Method of detecting a cathodic corrosion site on a metallized substrate
RCA CORP25 citations81
US4273805AJun 16, 1981
Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer
RCA CORP27 citations81
US4433008AFeb 21, 1984
Doped-oxide diffusion of phosphorus using borophosphosilicate glass
RCA CORP25 citations78
US4582745AApr 15, 1986
Dielectric layers in multilayer refractory metallization structure
RCA CORP15 citations74
US4363830ADec 14, 1982
Method of forming tapered contact holes for integrated circuit devices
RCA CORP17 citations74
US4502206AMar 5, 1985
Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region
RCA CORP10 citations73
US4237379ADec 2, 1980
Method for inspecting electrical devices
RCA CORP15 citations72
US4751554AJun 14, 1988
Silicon-on-sapphire integrated circuit and method of making the same
RCA CORP11 citations71
US4472210ASep 18, 1984
Method of making a semiconductor device to improve conductivity of amorphous silicon films
RCA CORP13 citations66