Inventor

BAYRAM CAN

US25 patents

⚠️ This page may combine multiple inventors who share the name “BAYRAM CAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAYRAM CAN

IBM

Light emitting diodes with via contact scheme

Thin film wafer transfer and structure for electronic devices

Polarization free gallium nitride-based photonic devices on nanopatterned silicon

Group III nitride integration with CMOS technology

Selective gallium nitride regrowth on (100) silicon

Controlled spalling of group III nitrides containing an embedded spall releasing plane

Dual phase gallium nitride material formation on (100) silicon

Thin film wafer transfer and structure for electronic devices

Group III nitride integration with CMOS technology

Group III nitride integration with CMOS technology

Selective gallium nitride regrowth on (100) silicon

Group III nitrides on nanopatterned substrates

Group III nitride integration with CMOS technology

Hetero-integration of III-N material on silicon

Back contact LED through spalling

Hetero-integration of III-N material on silicon

Engineered base substrates for releasing III-V epitaxy through spalling

Heterogeneous integration of group III nitride on silicon for advanced integrated circuits

GLOBALFOUNDRIES INC

Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same

Selective gallium nitride regrowth on (100) silicon

Heterogeneous integration of group III nitride on silicon for advanced integrated circuits

Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterning

UNIV ILLINOIS

Maximizing cubic phase group III-nitride on patterned silicon

Large area synthesis of cubic phase gallium nitride on silicon

Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer