Inventor

CALAFUT DANIEL

US48 patents

⚠️ This page may combine multiple inventors who share the name “CALAFUT DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CALAFUT DANIEL

ALPHA & OMEGA SEMICONDUCTOR

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Termination trench for power MOSFET applications

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Semiconductor device with termination structure for power MOSFET applications

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Method for forming dual oxide trench gate power MOSFET using oxide filled trench

Shielded gate trench MOSFET package

Normally on high voltage switch

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

MOSFET with integrated schottky diode

Normally on high voltage switch

Dual oxide trench gate power MOSFET using oxide filled trench

Trench MOSFET with integrated Schottky barrier diode

Method for forming a schottky barrier diode integrated with a trench MOSFET

FAIRCHILD SEMICONDUCTOR

Trench-gate field effect transistors and methods of forming the same

Charge balance field effect transistor

Method of forming trench gate field effect transistor with recessed mesas

Method of forming a shielded gate field effect transistor

Power device with improved edge termination

Shielded gate field effect transistor

Field effect transistor with source, heavy body region and shielded gate

Method of forming trench-gate field effect transistors

Trench-gate field effect transistor with channel enhancement region and methods of forming the same

Trench FET with improved body to gate alignment

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-gate field effect transistor

Field effect transistor with gated and non-gated trenches

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Power device edge termination having a resistor with one end biased to source voltage

Trench-based power semiconductor devices with increased breakdown voltage characteristics

YEDINAK JOSEPH A

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

YILMAZ HAMZA

Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact

Structure and method for forming trench-gate field effect transistor with source plug

Power device with improved edge termination

NAT SEMICONDUCTOR CORP

Integrated zener diode overvoltage protection structures in power DMOS device applications

Integrated zener diode protection structures and fabrication methods for DMOS power devices

LUI SIK

Shielded gate trench MOSFET package

ALPHA & OMEGA SEMICONDUCTOR INCORPORATED

MOSFET with integrated schottky diode

KOCON CHRISTOPHER BOGUSLAW

Field effect transistor and schottky diode structures

CALAFUT DANIEL

Trench MOSFET with integrated Schottky barrier diode

FAIRCHILD SEMICONDUCTOR CORPOR

Method and structure for forming a shielded gate field effect transistor