Inventor

YILMAZ HAMZA

US266 patents

⚠️ This page may combine multiple inventors who share the name “YILMAZ HAMZA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YILMAZ HAMZA

SILICONIX INC

Edge termination structure for power MOSFET

Method for making termination structure for power MOSFET

BICDMOS structures

Method for forming a BiCDMOS

Power metal-oxide-semiconductor field effect transistor

Method for fabricating a short channel trenched DMOS transistor

Zener diodes on the same wafer with BiCDMOS structures

Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate

MOS transistor having adjusted threshold voltage formed along with other transistors

BiCDMOS process technology

Method for forming a lateral MOS transistor having lightly doped drain formed along with other transistors in the same substrate

Method for forming a bipolar transistor having selected breakdown voltage

Method of making BiCDMOS structures

Short channel trenched DMOS transistor

Closed cell transistor with built-in voltage clamp

Reverse battery protection device containing power MOSFET

Low on-resistance power MOS technology

PMOS transistors with different breakdown voltages formed in the same substrate

Method for forming a zener diode region and an isolation region

Method of making power device with buffered gate shield region

BiCDMOS structure

ALPHA & OMEGA SEMICONDUCTOR

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

Method for forming nanotube semiconductor devices

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

Semiconductor device including superjunction structure formed using angled implant process

Device structure and methods of making high density MOSFETs for load switch and DC-DC applications

High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Lateral super-junction MOSFET device and termination structure

Split-gate trench power MOSFET with protected shield oxide

Termination trench for power MOSFET applications

YILMAZ HAMZA

Nanotube semiconductor devices

Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

Method of fabricating semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

High voltage semiconductor devices with JFET regions containing dielectrically isolated junctions

Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics

FAIRCHILD SEMICONDUCTOR

Trench-gate field effect transistors and methods of forming the same

Charge balance field effect transistor

Method of forming trench gate field effect transistor with recessed mesas

Method of forming a shielded gate field effect transistor

Power device with improved edge termination

Shielded gate field effect transistor

BOBDE MADHUR

High frequency switching MOSFETs with low output capacitance using a depletable P-shield

Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode

Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path

GEN ELECTRIC

Insulated gate device with configured emitter contact pad

Method of making a power IC structure with enhancement and/or CMOS logic

GUAN LINGPENG

Termination design for high voltage device