Inventor
WANG XIAOBIN
US174 patents
⚠️ This page may combine multiple inventors who share the name “WANG XIAOBIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEAGATE TECHNOLOGY LLC
11 patentsUS7898838B2Mar 1, 2011
Resistive sense memory calibration for self-reference read method
SEAGATE TECHNOLOGY LLC90 citations98
US7898844B2Mar 1, 2011
Magnetic tunnel junction and memristor apparatus
SEAGATE TECHNOLOGY LLC13 citations93
US7876604B2Jan 25, 2011
Stram with self-reference read scheme
SEAGATE TECHNOLOGY LLC19 citations93
US7852665B2Dec 14, 2010
Memory cell with proportional current self-reference sensing
SEAGATE TECHNOLOGY LLC35 citations93
US7846564B2Dec 7, 2010
Perpendicular magnetic recording media with magnetic anisotropy/coercivity gradient and local exchange coupling
SEAGATE TECHNOLOGY LLC19 citations93
US7826255B2Nov 2, 2010
Variable write and read methods for resistive random access memory
SEAGATE TECHNOLOGY LLC16 citations93
US7826260B2Nov 2, 2010
Spin-transfer torque memory self-reference read and write assist methods
SEAGATE TECHNOLOGY LLC16 citations93
US7804709B2Sep 28, 2010
Diode assisted switching spin-transfer torque memory unit
SEAGATE TECHNOLOGY LLC28 citations93
US7800938B2Sep 21, 2010
Oscillating current assisted spin torque magnetic memory
SEAGATE TECHNOLOGY LLC26 citations92
US7936592B2May 3, 2011
Non-volatile memory cell with precessional switching
SEAGATE TECHNOLOGY LLC18 citations91
US9087593B2Jul 21, 2015
Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit
SEAGATE TECHNOLOGY LLC6 citations84
ALPHA & OMEGA SEMICONDUCTOR
8 patentsUS7910486B2Mar 22, 2011
Method for forming nanotube semiconductor devices
ALPHA & OMEGA SEMICONDUCTOR45 citations94
US9214545B2Dec 15, 2015
Dual gate oxide trench MOSFET with channel stop trench
ALPHA & OMEGA SEMICONDUCTOR15 citations93
US9105494B2Aug 11, 2015
Termination trench for power MOSFET applications
ALPHA & OMEGA SEMICONDUCTOR14 citations92
US9356022B2May 31, 2016
Semiconductor device with termination structure for power MOSFET applications
ALPHA & OMEGA SEMICONDUCTOR11 citations84
US9236450B2Jan 12, 2016
Fabrication of MOS device with schottky barrier controlling layer
ALPHA & OMEGA SEMICONDUCTOR5 citations84
US8809143B2Aug 19, 2014
Fabrication of MOS device with schottky barrier controlling layer
ALPHA & OMEGA SEMICONDUCTOR9 citations84
US8728890B2May 20, 2014
Fabrication of MOS device with integrated Schottky diode in active region contact trench
ALPHA & OMEGA SEMICONDUCTOR5 citations84
US8598623B2Dec 3, 2013
Nanotube semiconductor devices and nanotube termination structures
ALPHA & OMEGA SEMICONDUCTOR5 citations84
AVALANCHE TECHNOLOGY INC
4 patentsUS9070855B2Jun 30, 2015
Magnetic random access memory having perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC40 citations98
US9166143B1Oct 20, 2015
Magnetic random access memory with multiple free layers
AVALANCHE TECHNOLOGY INC41 citations94
US9306154B2Apr 5, 2016
Magnetic random access memory with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC6 citations84
US9082951B2Jul 14, 2015
Magnetic random access memory with perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC5 citations84
ADCO PRODUCTS INC
4 patentsUS6048579AApr 11, 2000
Primer for improving the bonding of adhesives to nonporous substrates
ADCO PRODUCTS INC44 citations96
US6008305ADec 28, 1999
Primer for improving the bonding of adhesives to nonporous substrates
ADCO PRODUCTS INC46 citations96
US6124387ASep 26, 2000
Fast-cure silylated polymer adhesive
ADCO PRODUCTS INC45 citations94
US6498210B1Dec 24, 2002
Silylated polyurethanes for adhesives and sealants with improved mechanical properties
ADCO PRODUCTS INC62 citations92
BHALLA ANUP
4 patentsUS8093651B2Jan 10, 2012
MOS device with integrated schottky diode in active region contact trench
BHALLA ANUP16 citations92
US8637368B2Jan 28, 2014
Fabrication of MOS device with varying trench depth
BHALLA ANUP6 citations84
US8471332B2Jun 25, 2013
Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
BHALLA ANUP8 citations84
US8450794B2May 28, 2013
MOS device with varying contact trench lengths
BHALLA ANUP7 citations84
WANG XIAOBIN
4 patentsUS8742518B2Jun 3, 2014
Magnetic tunnel junction with free layer having exchange coupled magnetic elements
WANG XIAOBIN7 citations84
US8495118B2Jul 23, 2013
Tunable random bit generator with magnetic tunnel junction
WANG XIAOBIN15 citations84
US8481181B2Jul 9, 2013
Exchange coupled magnetic elements
WANG XIAOBIN13 citations84
US8399925B2Mar 19, 2013
Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
WANG XIAOBIN11 citations84
SIEMENS ENERGY & AUTOMAT
2 patentsSHENZHEN TIANYAO TECH CO LTD
2 patentsTAI SUNG-SHAN
2 patentsLI MING-JUN
2 patentsCHEN YIRAN
2 patentsJIN INSIK
2 patentsYILMAZ HAMZA
1 patentILLINOIS TOOL WORKS
1 patentPAN JI
1 patentShowing the top 50 of 174 patents by PatentIndex Score.