Inventor
PAN JI
US43 patents
⚠️ This page may combine multiple inventors who share the name “PAN JI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ALPHA & OMEGA SEMICONDUCTOR
27 patentsUS9230957B2Jan 5, 2016
Integrated snubber in a single poly MOSFET
ALPHA & OMEGA SEMICONDUCTOR16 citations93
US9105494B2Aug 11, 2015
Termination trench for power MOSFET applications
ALPHA & OMEGA SEMICONDUCTOR14 citations92
US9748375B2Aug 29, 2017
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
ALPHA & OMEGA SEMICONDUCTOR9 citations84
US9685435B2Jun 20, 2017
Integrated snubber in a single poly MOSFET
ALPHA & OMEGA SEMICONDUCTOR12 citations84
US9356022B2May 31, 2016
Semiconductor device with termination structure for power MOSFET applications
ALPHA & OMEGA SEMICONDUCTOR11 citations84
US9312336B2Apr 12, 2016
MOSFET device with reduced breakdown voltage
ALPHA & OMEGA SEMICONDUCTOR4 citations84
US9281394B2Mar 8, 2016
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
ALPHA & OMEGA SEMICONDUCTOR6 citations84
US9236450B2Jan 12, 2016
Fabrication of MOS device with schottky barrier controlling layer
ALPHA & OMEGA SEMICONDUCTOR5 citations84
US9006053B2Apr 14, 2015
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching
ALPHA & OMEGA SEMICONDUCTOR8 citations84
US8809143B2Aug 19, 2014
Fabrication of MOS device with schottky barrier controlling layer
ALPHA & OMEGA SEMICONDUCTOR9 citations84
US8728890B2May 20, 2014
Fabrication of MOS device with integrated Schottky diode in active region contact trench
ALPHA & OMEGA SEMICONDUCTOR5 citations84
US8362552B2Jan 29, 2013
MOSFET device with reduced breakdown voltage
ALPHA & OMEGA SEMICONDUCTOR7 citations84
US8362547B2Jan 29, 2013
MOS device with Schottky barrier controlling layer
ALPHA & OMEGA SEMICONDUCTOR9 citations84
US8053808B2Nov 8, 2011
Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
ALPHA & OMEGA SEMICONDUCTOR7 citations84
US7671439B2Mar 2, 2010
Junction barrier Schottky (JBS) with floating islands
ALPHA & OMEGA SEMICONDUCTOR5 citations74
US10388781B2Aug 20, 2019
Device structure having inter-digitated back to back MOSFETs
ALPHA & OMEGA SEMICONDUCTOR3 citations73
US10192982B2Jan 29, 2019
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
ALPHA & OMEGA SEMICONDUCTOR1 citations73
US10103140B2Oct 16, 2018
Switch circuit with controllable phase node ringing
ALPHA & OMEGA SEMICONDUCTOR4 citations73
US9564516B2Feb 7, 2017
Method of making integrated MOSFET-schottky diode device with reduced source and body kelvin contact impedance and breakdown voltage
ALPHA & OMEGA SEMICONDUCTOR3 citations73
US10062685B2Aug 28, 2018
Variable snubber for MOSFET application
ALPHA & OMEGA SEMICONDUCTOR1 citations63
US8586435B2Nov 19, 2013
Fabrication of MOSFET device with reduced breakdown voltage
ALPHA & OMEGA SEMICONDUCTOR3 citations63
US8362585B1Jan 29, 2013
Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging
ALPHA & OMEGA SEMICONDUCTOR3 citations63
US10978585B2Apr 13, 2021
MOS device with island region
ALPHA & OMEGA SEMICONDUCTOR0 citations62
US10763351B2Sep 1, 2020
Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10535764B2Jan 14, 2020
Device and fabrication of MOS device with island region
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10256236B2Apr 9, 2019
Forming switch circuit with controllable phase node ringing
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10074742B2Sep 11, 2018
MOS device with island region
ALPHA & OMEGA SEMICONDUCTOR0 citations52
PAN JI
10 patentsUS9059147B1Jun 16, 2015
Junction barrier schottky (JBS) with floating islands
PAN JI13 citations84
US8969950B2Mar 3, 2015
Integrated MOSFET-Schottky diode device with reduced source and body Kelvin contact impedance and breakdown voltage
PAN JI9 citations84
US8748268B1Jun 10, 2014
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching
PAN JI13 citations84
US8692322B2Apr 8, 2014
Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
PAN JI9 citations84
US8643071B2Feb 4, 2014
Integrated snubber in a single poly MOSFET
PAN JI14 citations84
US8680643B2Mar 25, 2014
Junction barrier Schottky (JBS) with floating islands
PAN JI3 citations62
US8227330B2Jul 24, 2012
Junction barrier Schottky (JBS) with floating islands
PAN JI3 citations62
US10161607B2Dec 25, 2018
Suction lighting system and method
PAN JI1 citations46
US10741105B2Aug 11, 2020
Wireless image processing system
PAN JI0 citations36
US9746164B1Aug 29, 2017
Suction lighting system
PAN JI0 citations36
BHALLA ANUP
4 patentsUS8093651B2Jan 10, 2012
MOS device with integrated schottky diode in active region contact trench
BHALLA ANUP16 citations92
US8450794B2May 28, 2013
MOS device with varying contact trench lengths
BHALLA ANUP7 citations84
US8928079B2Jan 6, 2015
MOS device with low injection diode
BHALLA ANUP5 citations73
US8283723B2Oct 9, 2012
MOS device with low injection diode
BHALLA ANUP4 citations62