Inventor
BAN HYO-DONG
KR15 patents
⚠️ This page may combine multiple inventors who share the name “BAN HYO-DONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS6566735B1May 20, 2003
Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film
SAMSUNG ELECTRONICS CO LTD38 citations95
US6589837B1Jul 8, 2003
Buried contact structure in semiconductor device and method of making the same
SAMSUNG ELECTRONICS CO LTD36 citations92
US6071802AJun 6, 2000
Method for manufacturing semiconductor device having self-aligned contact
SAMSUNG ELECTRONICS CO LTD28 citations91
US6448113B2Sep 10, 2002
Method of forming fuse area structure including protection film on sidewall of fuse opening in semiconductor device
SAMSUNG ELECTRONICS CO LTD29 citations90
US8928073B2Jan 6, 2015
Semiconductor devices including guard ring structures
SAMSUNG ELECTRONICS CO LTD8 citations84
US10886277B2Jan 5, 2021
Methods of manufacturing devices including a buried gate cell and a bit line structure including a thermal oxide buffer pattern
SAMSUNG ELECTRONICS CO LTD7 citations82
US6555450B2Apr 29, 2003
Contact forming method for semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations81
US6696353B2Feb 24, 2004
Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film
SAMSUNG ELECTRONICS CO LTD11 citations73
US6316803B1Nov 13, 2001
Integrated circuit memory devices having self-aligned contact
SAMSUNG ELECTRONICS CO LTD12 citations72
US7081389B2Jul 25, 2006
Semiconductor devices having dual capping layer patterns and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations71
US11574912B2Feb 7, 2023
Memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US7339223B2Mar 4, 2008
Semiconductor devices having dual capping layer patterns and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations53
US6835998B2Dec 28, 2004
Fuse area structure including protection film on sidewall of fuse opening in semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US7667331B2Feb 23, 2010
Interposer chip, method of manufacturing the interposer chip, and multi-chip package having the interposer chip
SAMSUNG ELECTRONICS CO LTD0 citations47