Inventor

CHO BEAK-HYUNG

KR80 patents

⚠️ This page may combine multiple inventors who share the name “CHO BEAK-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHO BEAK-HYUNG

SAMSUNG ELECTRONICS CO LTD

Write driver circuit in phase change memory device and method for applying write current

Semiconductor memory device and method for reducing cell activation during write operations

Semiconductor memory device and method for biasing dummy line therefor

Phase change memories and/or methods of programming phase change memories using sequential reset control

Method and driver for programming phase change memory cell

Phase-change memory device and method of writing a phase-change memory device

Writing driver circuit of phase-change memory

Phase random access memory with high density

Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device

Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory

Phase change random access memory

Method of programming a memory cell array using successive pulses of increased duration

Phase-change memory device and method of writing a phase-change memory device

Phase-change memory device

Method for programming phase-change memory array to set state and circuit of a phase-change memory device

Semiconductor memory device

Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range

Phase-change semiconductor memory device and method of programming same

Phase change random access memory (PRAM) device

Memory device with reduced word line resistance

Phase change memory device generating program current and method thereof

Variable resistance memory device

Semiconductor memory device with stacked control transistors

Phase change memory devices employing cell diodes and methods of fabricating the same

Phase-changeable memory device and read method thereof

Phase change memory device and method of programming the same

Method and driver for programming phase change memory cell

Semiconductor memory devices having core structures for multi-writing

Phase change random access memory

Phase change memory device and related programming method

Phase change memory devices and program methods

Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methods

Phase change memory device and method of driving word line thereof

Nonvolatile memory devices having enhanced bit line and/or word line driving capability

Writing driver circuit of phase-change memory

Nonvolatile memory devices having bit line discharge control circuits therein that provide equivalent bit line discharge control

Method of testing PRAM device

Apparatus and systems using phase change memories

Initial firing method and phase change memory device for performing firing effectively

Method and driver for programming phase change memory cell

Flip chip interface circuit of a semiconductor memory device

Layout method of latch-up prevention circuit of a semiconductor device

Semiconductor memory device

Semiconductor memory device having dummy bit line

Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device

KIM SUNG-MIN

Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell

BAE JUN-SOO

Phase change memory devices and systems, and related programming methods

CHOI BYUNG-GIL

Variable resistance memory device and system thereof

LEE KWANG JIN

Semiconductor device having memory array, method of writing, and systems associated therewith

CHO BEAK-HYUNG

Phase change memory device generating program current and method thereof