Inventor
STEINBRENNER JUERGEN
AT26 patents
⚠️ This page may combine multiple inventors who share the name “STEINBRENNER JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
21 patentsUS10629416B2Apr 21, 2020
Wafer chuck and processing arrangement
INFINEON TECHNOLOGIES AG3 citations66
US10910309B2Feb 2, 2021
Nanotube structure based metal damascene process
INFINEON TECHNOLOGIES AG0 citations62
US11804415B2Oct 31, 2023
Semiconductor device with first and second portions that include silicon and nitrogen
INFINEON TECHNOLOGIES AG0 citations60
US11075134B2Jul 27, 2021
Semiconductor device with a portion including silicon and nitrogen and method of manufacturing
INFINEON TECHNOLOGIES AG0 citations60
US11387081B2Jul 12, 2022
Wafer chuck and processing arrangement
INFINEON TECHNOLOGIES AG0 citations56
US11211303B2Dec 28, 2021
Semiconductor device including a passivation structure and manufacturing method
INFINEON TECHNOLOGIES AG1 citations55
US11352253B2Jun 7, 2022
Semiconductor device, microphone and methods for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations54
US10777506B2Sep 15, 2020
Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10475743B2Nov 12, 2019
Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10325803B2Jun 18, 2019
Semiconductor wafer and method for processing a semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US10043750B2Aug 7, 2018
Nanotube structure based metal damascene process
INFINEON TECHNOLOGIES AG0 citations51
US9984915B2May 29, 2018
Semiconductor wafer and method for processing a semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US9941111B2Apr 10, 2018
Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
INFINEON TECHNOLOGIES AG1 citations51
US9704800B2Jul 11, 2017
Nanotube structure based metal damascene process
INFINEON TECHNOLOGIES AG0 citations51
US9159669B2Oct 13, 2015
Nanotube structure based metal damascene process
INFINEON TECHNOLOGIES AG0 citations51
US9773736B2Sep 26, 2017
Intermediate layer for copper structuring and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations50
US10049879B2Aug 14, 2018
Self aligned silicon carbide contact formation using protective layer
INFINEON TECHNOLOGIES AG0 citations49
US9666482B1May 30, 2017
Self aligned silicon carbide contact formation using protective layer
INFINEON TECHNOLOGIES AG0 citations49
US9478409B2Oct 25, 2016
Method for coating a workpiece
INFINEON TECHNOLOGIES AG0 citations49
US9728480B2Aug 8, 2017
Passivation layer and method of making a passivation layer
INFINEON TECHNOLOGIES AG1 citations45
US10858246B2Dec 8, 2020
Semiconductor device, microphone and methods for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations44
INFINEON TECHNOLOGIES AUSTRIA AG
4 patentsUS9455136B2Sep 27, 2016
Controlling the reflow behaviour of BPSG films and devices made thereof
INFINEON TECHNOLOGIES AUSTRIA AG2 citations60
US11387095B2Jul 12, 2022
Passivation structuring and plating for semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations54
US9768273B2Sep 19, 2017
Method of forming a trench using epitaxial lateral overgrowth
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US10347491B2Jul 9, 2019
Forming recombination centers in a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations48