P

Inventor

NAM SANG-WAN

KR143 patents
⚠️ This page may combine multiple inventors who share the name “NAM SANG-WAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

25 patents
US9514827B1Dec 6, 2016

Memory device, memory system and method of operating memory device

SAMSUNG ELECTRONICS CO LTD56 citations98
US10541033B2Jan 21, 2020

Non-volatile memory device and memory system including the same and program method thereof

SAMSUNG ELECTRONICS CO LTD17 citations94
US7773419B2Aug 10, 2010

NOR flash memory device with a serial sensing operation and method of sensing data bits in a NOR flash memory device

SAMSUNG ELECTRONICS CO LTD21 citations93
US10573386B2Feb 25, 2020

Memory device including NAND strings and method of operating the same

SAMSUNG ELECTRONICS CO LTD15 citations86
US11200955B2Dec 14, 2021

Non-volatile memory device and memory system including the same and program method thereof

SAMSUNG ELECTRONICS CO LTD5 citations84
US10909032B2Feb 2, 2021

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD6 citations84
US10671529B2Jun 2, 2020

Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays

SAMSUNG ELECTRONICS CO LTD4 citations84
US10600487B2Mar 24, 2020

Methods of erasing data in nonvolatile memory devices and nonvolatile memory devices performing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US10497444B2Dec 3, 2019

Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance

SAMSUNG ELECTRONICS CO LTD4 citations84
US10121542B2Nov 6, 2018

Nonvolatile memory device, storage device including nonvolatile memory device and reading method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD7 citations84
US10043580B2Aug 7, 2018

Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance

SAMSUNG ELECTRONICS CO LTD7 citations84
US9799400B2Oct 24, 2017

Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance

SAMSUNG ELECTRONICS CO LTD7 citations84
US9697901B2Jul 4, 2017

3D flash memory device having different dummy word lines and data storage devices including same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9508441B1Nov 29, 2016

Memory device and memory system

SAMSUNG ELECTRONICS CO LTD17 citations84
US9496038B1Nov 15, 2016

Three-dimensional flash memory device including dummy word line

SAMSUNG ELECTRONICS CO LTD19 citations84
US9478290B1Oct 25, 2016

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD17 citations84
US9466387B2Oct 11, 2016

Operating method of nonvolatile memory and method of controlling nonvolatile memory

SAMSUNG ELECTRONICS CO LTD5 citations84
US9449699B2Sep 20, 2016

Nonvolatile memory and erasing method thereof

SAMSUNG ELECTRONICS CO LTD5 citations84
US9418749B2Aug 16, 2016

Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance

SAMSUNG ELECTRONICS CO LTD8 citations84
US9281070B2Mar 8, 2016

Nonvolatile memory and erasing method thereof

SAMSUNG ELECTRONICS CO LTD4 citations84
US9240239B2Jan 19, 2016

Nonvolatile memory devices and driving methods thereof

SAMSUNG ELECTRONICS CO LTD5 citations84
US9230659B2Jan 5, 2016

Nonvolatile memory device capable of reducing a setup/precharge speed of a bitline for reducing peak current and related programming method

SAMSUNG ELECTRONICS CO LTD10 citations84
US9142313B2Sep 22, 2015

Memory system and programming method thereof

SAMSUNG ELECTRONICS CO LTD8 citations84
US7495961B2Feb 24, 2009

Sense amplifiers including multiple precharge circuits and associated memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US9786372B2Oct 10, 2017

Nonvolatile memory device and wordline driving method thereof

SAMSUNG ELECTRONICS CO LTD9 citations82

NAM SANG-WAN

15 patents
US9312008B2Apr 12, 2016

Nonvolatile memory device and method of operating the same

NAM SANG-WAN20 citations93
US9190151B2Nov 17, 2015

Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance

NAM SANG-WAN20 citations92
US9025383B2May 5, 2015

Nonvolatile memory device and method of programming the same

NAM SANG-WAN19 citations92
US8837228B2Sep 16, 2014

Nonvolatile memory and erasing method thereof

NAM SANG-WAN29 citations90
US9842659B2Dec 12, 2017

Non-volatile memory device for detecting progressive error, memory system, and method of operating the non-volatile memory device

NAM SANG-WAN16 citations84
US9812206B2Nov 7, 2017

3D flash memory device having different dummy word lines and data storage devices including same

NAM SANG-WAN7 citations84
US9620232B2Apr 11, 2017

Nonvolatile memory device and method of operating the same

NAM SANG-WAN11 citations84
US9418753B2Aug 16, 2016

Method of operating memory controller and data storage device including memory controller

NAM SANG-WAN7 citations84
US9318202B2Apr 19, 2016

Nonvolatile memory device and method of operating the same

NAM SANG-WAN12 citations84
US9293206B2Mar 22, 2016

Memory system including nonvolatile memory device and erase method thereof

NAM SANG-WAN14 citations84
US9053978B2Jun 9, 2015

Erase system and method of nonvolatile memory device

NAM SANG-WAN15 citations84
US8953376B2Feb 10, 2015

Nonvolatile memory device and read method thereof

NAM SANG-WAN14 citations84
US9870825B2Jan 16, 2018

Nonvolatile memory device and method of programming the same

NAM SANG-WAN13 citations83
US9721664B2Aug 1, 2017

Memory devices and methods of operating the memory devices by programming normal cells after programming a first dummy cell

NAM SANG-WAN12 citations83
US9378820B2Jun 28, 2016

Nonvolatile memory device and worldline driving method thereof

NAM SANG-WAN9 citations82

KANG KYUNG-HWA

2 patents

YOON CHIWEON

2 patents

SHIM SUNIL

2 patents

YOON CHI WEON

1 patent

PARK JUNG-HOON

1 patent

NAM SANG WAN

1 patent

CHOI YOON-HEE

1 patent

Showing the top 50 of 143 patents by PatentIndex Score.