Inventor
LEE KANG-BIN
KR22 patents
⚠️ This page may combine multiple inventors who share the name “LEE KANG-BIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS9466387B2Oct 11, 2016
Operating method of nonvolatile memory and method of controlling nonvolatile memory
SAMSUNG ELECTRONICS CO LTD5 citations84
US10629267B2Apr 21, 2020
Nonvolatile memory device and method of programming in the same
SAMSUNG ELECTRONICS CO LTD8 citations81
US10152380B2Dec 11, 2018
Memory device, memory system, and method of operating memory device
SAMSUNG ELECTRONICS CO LTD6 citations73
US9704590B2Jul 11, 2017
Operating method of nonvolatile memory and method of controlling nonvolatile memory
SAMSUNG ELECTRONICS CO LTD2 citations73
US9564229B2Feb 7, 2017
Nonvolatile memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11217311B2Jan 4, 2022
Memory device with improved program performance and method of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11158379B2Oct 26, 2021
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11043274B2Jun 22, 2021
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10714184B2Jul 14, 2020
Memory device with improved program performance and method of operating the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US10854250B2Dec 1, 2020
Memory device including a circuit for detecting word line defect and operating method thereof
SAMSUNG ELECTRONICS CO LTD4 citations71
US10892015B2Jan 12, 2021
Nonvolatile memory device and method of programming in the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US11798629B2Oct 24, 2023
Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12387791B2Aug 12, 2025
Memory device with improved program performance and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12046287B2Jul 23, 2024
Memory device with improved program performance and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11600331B2Mar 7, 2023
Memory device with improved program performance and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11152074B2Oct 19, 2021
Memory device with improved program performance and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
NAM SANG-WAN
4 patentsUS9659662B2May 23, 2017
Nonvolatile memory device and method of erasing nonvolatile memory device
NAM SANG-WAN2 citations73
US9552886B2Jan 24, 2017
Memory system and method of driving memory system using zone voltages
NAM SANG-WAN2 citations73
US9165669B2Oct 20, 2015
Memory system and method of driving memory system using zone voltages
NAM SANG-WAN4 citations73
US9076683B2Jul 7, 2015
Operating method of nonvolatile memory and method of controlling nonvolatile memory
NAM SANG-WAN1 citations62