Inventor
PIPITONE JOHN
US20 patents
⚠️ This page may combine multiple inventors who share the name “PIPITONE JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
12 patentsUS7244344B2Jul 17, 2007
Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
APPLIED MATERIALS INC34 citations96
US7737702B2Jun 15, 2010
Apparatus for wafer level arc detection at an electrostatic chuck electrode
APPLIED MATERIALS INC37 citations92
US7214619B2May 8, 2007
Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
APPLIED MATERIALS INC36 citations92
US7768269B2Aug 3, 2010
Method of multi-location ARC sensing with adaptive threshold comparison
APPLIED MATERIALS INC42 citations89
US7399943B2Jul 15, 2008
Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
APPLIED MATERIALS INC9 citations84
US7750645B2Jul 6, 2010
Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
APPLIED MATERIALS INC9 citations81
US7820020B2Oct 26, 2010
Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
APPLIED MATERIALS INC4 citations74
US10648074B2May 12, 2020
Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface
APPLIED MATERIALS INC2 citations73
US7268076B2Sep 11, 2007
Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
APPLIED MATERIALS INC6 citations62
US7750644B2Jul 6, 2010
System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating
APPLIED MATERIALS INC4 citations60
US10400328B2Sep 3, 2019
Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface
APPLIED MATERIALS INC0 citations52
US7733095B2Jun 8, 2010
Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode
APPLIED MATERIALS INC1 citations52
HOFFMAN DANIEL J
3 patentsUS8070925B2Dec 6, 2011
Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
HOFFMAN DANIEL J36 citations92
US9593411B2Mar 14, 2017
Physical vapor deposition chamber with capacitive tuning at wafer support
HOFFMAN DANIEL J8 citations83
US9856558B2Jan 2, 2018
Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
HOFFMAN DANIEL J3 citations72
BROWN KARL M
3 patentsUS8512526B2Aug 20, 2013
Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron
BROWN KARL M7 citations83
US8062484B2Nov 22, 2011
Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
BROWN KARL M7 citations83
US8562798B2Oct 22, 2013
Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
BROWN KARL M4 citations73