Inventor
ZHOU YUCHEN
US204 patents
⚠️ This page may combine multiple inventors who share the name “ZHOU YUCHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AVALANCHE TECHNOLOGY INC
13 patentsUS9793319B2Oct 17, 2017
Multilayered seed structure for perpendicular MTJ memory element
AVALANCHE TECHNOLOGY INC46 citations98
US9780300B2Oct 3, 2017
Magnetic memory element with composite perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC36 citations98
US9608038B2Mar 28, 2017
Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
AVALANCHE TECHNOLOGY INC40 citations98
US9070855B2Jun 30, 2015
Magnetic random access memory having perpendicular enhancement layer
AVALANCHE TECHNOLOGY INC40 citations98
US9166143B1Oct 20, 2015
Magnetic random access memory with multiple free layers
AVALANCHE TECHNOLOGY INC41 citations94
US9166154B2Oct 20, 2015
MTJ stack and bottom electrode patterning process with ion beam etching using a single mask
AVALANCHE TECHNOLOGY INC47 citations94
US9070869B2Jun 30, 2015
Fabrication method for high-density MRAM using thin hard mask
AVALANCHE TECHNOLOGY INC29 citations94
US9318179B2Apr 19, 2016
Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers
AVALANCHE TECHNOLOGY INC15 citations93
US9028910B2May 12, 2015
MTJ manufacturing method utilizing in-situ annealing and etch back
AVALANCHE TECHNOLOGY INC19 citations93
US8779537B2Jul 15, 2014
Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer
AVALANCHE TECHNOLOGY INC31 citations93
US8724380B1May 13, 2014
Method for reading and writing multi-level cells
AVALANCHE TECHNOLOGY INC22 citations92
US9748471B2Aug 29, 2017
Perpendicular magnetic memory element having magnesium oxide cap layer
AVALANCHE TECHNOLOGY INC9 citations84
US9679625B2Jun 13, 2017
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
AVALANCHE TECHNOLOGY INC5 citations84
ZHOU YUCHEN
12 patentsUS8623452B2Jan 7, 2014
Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
ZHOU YUCHEN49 citations98
US8203389B1Jun 19, 2012
Field tunable spin torque oscillator for RF signal generation
ZHOU YUCHEN80 citations98
US9491431B2Nov 8, 2016
Method and apparatus to produce re-focusable vision by direct retinal projection with mirror array
ZHOU YUCHEN17 citations93
US8953285B2Feb 10, 2015
Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
ZHOU YUCHEN18 citations93
US8559215B2Oct 15, 2013
Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
ZHOU YUCHEN34 citations93
US8513029B2Aug 20, 2013
Discrete contact MR bio-sensor with magnetic label field alignment
ZHOU YUCHEN22 citations93
US8451567B2May 28, 2013
High resolution magnetic read head using top exchange biasing and/or lateral hand biasing of the free layer
ZHOU YUCHEN21 citations93
US9492645B2Nov 15, 2016
Skin treatment device with an integrated specimen dispenser
ZHOU YUCHEN46 citations92
US8059496B1Nov 15, 2011
Magnetic core plasmon antenna with recessed plasmon layer
ZHOU YUCHEN26 citations92
US10178367B2Jan 8, 2019
Method and apparatus to realize virtual reality
ZHOU YUCHEN4 citations84
US9789295B2Oct 17, 2017
Customized skin care and method to provide same
ZHOU YUCHEN15 citations84
US9699433B2Jul 4, 2017
Method and apparatus to produce re-focusable vision with detecting re-focusing event from human eye
ZHOU YUCHEN4 citations84
ZHANG KUNLIANG
7 patentsUS8064244B2Nov 22, 2011
Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications
ZHANG KUNLIANG102 citations99
US8274811B2Sep 25, 2012
Assisting FGL oscillations with perpendicular anisotropy for MAMR
ZHANG KUNLIANG70 citations98
US8208219B2Jun 26, 2012
Modified field generation layer for microwave assisted magnetic recording
ZHANG KUNLIANG52 citations94
US8184411B2May 22, 2012
MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application
ZHANG KUNLIANG48 citations94
US8920947B2Dec 30, 2014
Multilayer structure with high perpendicular anisotropy for device applications
ZHANG KUNLIANG22 citations93
US8488373B2Jul 16, 2013
Spin injection layer robustness for microwave assisted magnetic recording
ZHANG KUNLIANG24 citations93
US8300356B2Oct 30, 2012
CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
ZHANG KUNLIANG27 citations93
HEADWAY TECHNOLOGIES INC
3 patentsUS7804668B2Sep 28, 2010
Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling
HEADWAY TECHNOLOGIES INC18 citations93
US8036069B1Oct 11, 2011
Plasmon shield to shape and reduce optical spot
HEADWAY TECHNOLOGIES INC34 citations92
US8004794B2Aug 23, 2011
Perpendicular magnetic recording head laminated with AFM-FM phase change material
HEADWAY TECHNOLOGIES INC30 citations92
PALO ALTO NETWORKS INC
3 patentsUS11856003B2Dec 26, 2023
Innocent until proven guilty (IUPG): adversary resistant and false positive resistant deep learning models
PALO ALTO NETWORKS INC7 citations85
US11615184B2Mar 28, 2023
Building multi-representational learning models for static analysis of source code
PALO ALTO NETWORKS INC12 citations85
US11550911B2Jan 10, 2023
Multi-representational learning models for static analysis of source code
PALO ALTO NETWORKS INC13 citations85
GM GLOBAL TECH OPERATIONS LLC
2 patentsJUNG DONG HA
1 patentSATOH KIMIHIRO
1 patentZHANG JING
1 patentTIEU HIEU
1 patentWAHNG CHAO UEI
1 patentJIN XUHUI
1 patentCISCO TECH INC
1 patentHUAI YIMING
1 patentPIERRES INC
1 patentHEADWAY TECH INC
1 patentShowing the top 50 of 204 patents by PatentIndex Score.