Inventor

ROBUSTELLI MATTIA

IT38 patents

⚠️ This page may combine multiple inventors who share the name “ROBUSTELLI MATTIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ROBUSTELLI MATTIA

MICRON TECHNOLOGY INC

Dopant-modulated etching for memory devices

Programming memory cells using asymmetric current pulses

Techniques for programming multi-level self-selecting memory cell

Dynamic polarization for reducing stress induced leakage current

Techniques for programming multi-level self-selecting memory cell

Dopant-modulated etching for memory devices

Reading a multi-level memory cell

Adaptive write operations for a memory device

Programming techniques for polarity-based memory cells

Asymmetric memory cell design

Techniques for programming multi-level self-selecting memory cell

Programming techniques for polarity-based memory cells

Reading a multi-level memory cell

Adaptive write operations for a memory device

Implementations to store fuse data in memory devices

Dopant-modulated etching for memory devices

Programming memory cells using asymmetric current pulses

Programming techniques for polarity-based memory cells

Reading a multi-level memory cell

Adaptive write operations for a memory device

Dedicated read voltages for data structures

Implementations to store fuse data in memory devices

Cross-point pillar architecture for memory arrays

Cross-point pillar architecture for memory arrays

Wordline boost by charge sharing in a memory device

Write latency and energy using asymmetric cell design

Dedicated read voltages for data structures

Reading memory cell history during program operation for adaptive programming

Unipolar programming of memory cells

Apparatus with multi-bit cell read mechanism and methods for operating the same

Techniques for multi-level chalcogenide memory cell programming

Reading memory cell history during program operation for adaptive programming

INTEL CORP

Phase change memory devices and systems having reduced voltage threshold drift and associated methods

Phase change memory devices and systems having reduced voltage threshold drift and associated methods

VISCONTI ANGELO

Reading memory cell history during program operation for adaptive programming

SK HYNIX INC

Semiconductor memory device and method of operating the same

ARITOME SEIICHI

Semiconductor memory device and method of operating the same

CHIAVARONE LUCA

Dynamic polarization for reducing stress induced leakage current