Inventor
SAMACHISA GHEORGHE
US26 patents
⚠️ This page may combine multiple inventors who share the name “SAMACHISA GHEORGHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
20 patentsUS6664587B2Dec 16, 2003
EEPROM cell array structure with specific floating gate shape
SANDISK CORP146 citations99
US5883409AMar 16, 1999
EEPROM with split gate source side injection
SANDISK CORP216 citations99
US5776810AJul 7, 1998
Method for forming EEPROM with split gate source side injection
SANDISK CORP138 citations99
US5595924AJan 21, 1997
Technique of forming over an irregular surface a polysilicon layer with a smooth surface
SANDISK CORP484 citations99
US5534456AJul 9, 1996
Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers
SANDISK CORP171 citations99
US6002152ADec 14, 1999
EEPROM with split gate source side injection with sidewall spacers
SANDISK CORP90 citations98
US5756385AMay 26, 1998
Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
SANDISK CORP107 citations98
US6704222B2Mar 9, 2004
Multi-state operation of dual floating gate array
SANDISK CORP62 citations96
US5965913AOct 12, 1999
Dense vertical programmable read only memory cell structures and processes for making them
SANDISK CORP74 citations96
US5847425ADec 8, 1998
Dense vertical programmable read only memory cell structures and processes for making them
SANDISK CORP61 citations96
US5847996ADec 8, 1998
Eeprom with split gate source side injection
SANDISK CORP78 citations96
US5747359AMay 5, 1998
Method of patterning polysilicon layers on substrate
SANDISK CORP75 citations96
US5654217AAug 5, 1997
Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
SANDISK CORP63 citations96
US5512505AApr 30, 1996
Method of making dense vertical programmable read only memory cell structure
SANDISK CORP76 citations96
US6954381B2Oct 11, 2005
EEPROM with split gate source side injection with sidewall spacers
SANDISK CORP13 citations93
US6861700B2Mar 1, 2005
Eeprom with split gate source side injection
SANDISK CORP17 citations93
US5910925AJun 8, 1999
EEPROM with split gate source side injection
SANDISK CORP28 citations93
US5910915AJun 8, 1999
EEPROM with split gate source side injection
SANDISK CORP28 citations93
US7071060B1Jul 4, 2006
EEPROM with split gate source side infection with sidewall spacers
SANDISK CORP9 citations74
US7449746B2Nov 11, 2008
EEPROM with split gate source side injection
SANDISK CORP3 citations63
SUNDISK CORP
5 patentsUS5712180AJan 27, 1998
EEPROM with split gate source side injection
SUNDISK CORP480 citations99
US5380672AJan 10, 1995
Dense vertical programmable read only memory cell structures and processes for making them
SUNDISK CORP139 citations99
US5343063AAug 30, 1994
Dense vertical programmable read only memory cell structure and processes for making them
SUNDISK CORP903 citations99
US5313421AMay 17, 1994
EEPROM with split gate source side injection
SUNDISK CORP1,011 citations99
US5272669ADec 21, 1993
Method and structure for programming floating gate memory cells
SUNDISK CORP158 citations98