Inventor
XIAO DEYUAN
CN181 patents
⚠️ This page may combine multiple inventors who share the name “XIAO DEYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHANGXIN MEMORY TECH INC
16 patentsUS12349332B2Jul 1, 2025
Manufacturing method of semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC2 citations75
US12310005B2May 20, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC2 citations74
US12137550B2Nov 5, 2024
Semiconductor structure with a first lower electrode layer and a second lower electrode layer and method for manufacturing same
CHANGXIN MEMORY TECH INC4 citations74
US12342524B2Jun 24, 2025
Method for fabricating semiconductor device and semiconductor device
CHANGXIN MEMORY TECH INC2 citations73
US11637189B1Apr 25, 2023
Semiconductor structure and forming method thereof
CHANGXIN MEMORY TECH INC2 citations73
US12396161B2Aug 19, 2025
Semiconductor structure including bit line compose of a metal layer and a metal silicide layer and manufacturing method thereof
CHANGXIN MEMORY TECH INC1 citations64
US12557270B2Feb 17, 2026
Semiconductor structure and method for manufacturing the same, memory and method for manufacturing the same
CHANGXIN MEMORY TECH INC0 citations62
US12471267B2Nov 11, 2025
Transistor and manufacturing method thereof, and memory
CHANGXIN MEMORY TECH INC0 citations62
US12402303B2Aug 26, 2025
Semiconductor structure having a plurality of bit lines spaced apart from each other in a first direction and extend in a second direction
CHANGXIN MEMORY TECH INC0 citations62
US12389589B2Aug 12, 2025
Semiconductor device and method for manufacturing semiconductor device
CHANGXIN MEMORY TECH INC0 citations62
US12376280B2Jul 29, 2025
Memory and memory forming method
CHANGXIN MEMORY TECH INC0 citations62
US12349333B2Jul 1, 2025
Manufacturing method of semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations62
US12309999B2May 20, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations62
US12300744B2May 13, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations62
US12262523B2Mar 25, 2025
Manufacturing method of semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations62
US11854862B2Dec 26, 2023
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC1 citations62
SEMICONDUCTOR MFG INT SHANGHAI CORP
9 patentsUS9715987B2Jul 25, 2017
Semiconductor device and related manufacturing method
SEMICONDUCTOR MFG INT SHANGHAI CORP6 citations84
US10373880B2Aug 6, 2019
Semiconductor device and related manufacturing method
SEMICONDUCTOR MFG INT SHANGHAI CORP2 citations73
US10026850B2Jul 17, 2018
Transistor and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP2 citations73
US9673322B2Jun 6, 2017
Vertical junctionless transistor device and manufacturing methods
SEMICONDUCTOR MFG INT SHANGHAI CORP2 citations73
US9608115B2Mar 28, 2017
FinFET having buffer layer between channel and substrate
SEMICONDUCTOR MFG INT SHANGHAI CORP2 citations73
US9530977B2Dec 27, 2016
Tunneling nanotube field effect transistor and manufacturing method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP3 citations73
US9590031B2Mar 7, 2017
Fin-type field effect transistor and manufacturing method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP2 citations68
US10720332B2Jul 21, 2020
Transistor and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations63
US9425101B2Aug 23, 2016
FinFET fabrication method using buffer layers between channel and semiconductor substrate
SEMICONDUCTOR MFG INT SHANGHAI CORP2 citations63
ZING SEMICONDUCTOR CORP
8 patentsUS9972637B2May 15, 2018
Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the same
ZING SEMICONDUCTOR CORP5 citations84
US9779999B2Oct 3, 2017
Complementary nanowire semiconductor device and fabrication method thereof
ZING SEMICONDUCTOR CORP2 citations73
US9773891B1Sep 26, 2017
FinFET and fabrication method thereof
ZING SEMICONDUCTOR CORP3 citations73
US9647067B1May 9, 2017
FinFET and fabrication method thereof
ZING SEMICONDUCTOR CORP5 citations73
US10100431B2Oct 16, 2018
Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
ZING SEMICONDUCTOR CORP2 citations72
US9837517B2Dec 5, 2017
Method for making III-V nanowire quantum well transistor
ZING SEMICONDUCTOR CORP2 citations72
US9834861B2Dec 5, 2017
Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
ZING SEMICONDUCTOR CORP3 citations72
US9640615B1May 2, 2017
Method for making III-V nanowire quantum well transistor
ZING SEMICONDUCTOR CORP2 citations72
XIAO DEYUAN
4 patentsUS8274118B2Sep 25, 2012
Hybrid material accumulation mode GAA CMOSFET
XIAO DEYUAN7 citations84
US9202762B2Dec 1, 2015
Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing
XIAO DEYUAN5 citations72
US8409962B2Apr 2, 2013
Manufacturing method of copper interconnection structure with MIM capacitor
XIAO DEYUAN5 citations72
US8233312B2Jul 31, 2012
DRAM cell utilizing floating body effect and manufacturing method thereof
XIAO DEYUAN6 citations72
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD
4 patentsUS11398490B2Jul 26, 2022
Stacked neural device structure and manufacturing method thereof
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD2 citations73
US10916544B2Feb 9, 2021
Gate-all-around quantum well complementary inverter and method of making the same
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD6 citations73
US11049857B2Jun 29, 2021
Nanosheet CMOS semiconductor device and the method of manufacturing the same
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD1 citations62
US11049949B2Jun 29, 2021
Gate-all-around gradient-doped nano-sheet complementary inverter and method of making the same
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD1 citations62
SEMICONDUCTOR MFG INT SHANGHAI
3 patentsUS9029211B2May 12, 2015
Nano field-effect vacuum tube and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI17 citations93
US9093508B1Jul 28, 2015
Nano field-effect vacuum tube
SEMICONDUCTOR MFG INT SHANGHAI6 citations84
US9153585B2Oct 6, 2015
Tunneling field effect transistor device and related manufacturing method
SEMICONDUCTOR MFG INT SHANGHAI4 citations73
SHANGHAI INST MICROSYS & INF
2 patentsSEMICONDUCTOR MFG INT BEIJING CORP
2 patentsUS10083879B2Sep 25, 2018
Semiconductor nanowire device and fabrication method thereof
SEMICONDUCTOR MFG INT BEIJING CORP2 citations73
US9577063B2Feb 21, 2017
Bipolar transistor, band-gap reference circuit and virtual ground reference circuit and methods of fabricating thereof
SEMICONDUCTOR MFG INT BEIJING CORP5 citations69
SEMICONDUCTOR MFG INT CORP
1 patentCHI MIN-HWA
1 patentShowing the top 50 of 181 patents by PatentIndex Score.