Inventor
PYZYNA ADAM M
US16 patents
⚠️ This page may combine multiple inventors who share the name “PYZYNA ADAM M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
12 patentsUS9721888B2Aug 1, 2017
Trench silicide with self-aligned contact vias
IBM21 citations94
US9306164B1Apr 5, 2016
Electrode pair fabrication using directed self assembly of diblock copolymers
IBM22 citations92
US9653679B1May 16, 2017
Magnetoresistive structures with stressed layer
IBM8 citations84
US9601686B1Mar 21, 2017
Magnetoresistive structures with stressed layer
IBM7 citations84
US10600656B2Mar 24, 2020
Directed self-assembly for copper patterning
IBM2 citations73
US11737373B2Aug 22, 2023
Silicide passivation of niobium
IBM0 citations62
US11221310B2Jan 11, 2022
Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
IBM0 citations62
US10168299B2Jan 1, 2019
Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
IBM1 citations62
US10505112B1Dec 10, 2019
CMOS compatible non-filamentary resistive memory stack
IBM0 citations52
US10068850B2Sep 4, 2018
Trench silicide with self-aligned contact vias
IBM0 citations52
US9349640B1May 24, 2016
Electrode pair fabrication using directed self assembly of diblock copolymers
IBM1 citations52
US10332957B2Jun 25, 2019
Stacked capacitor with symmetric leakage and break-down behaviors
IBM0 citations42
GLOBALFOUNDRIES INC
3 patentsUS9437443B2Sep 6, 2016
Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides
GLOBALFOUNDRIES INC26 citations94
US9716036B2Jul 25, 2017
Electronic device including moat power metallization in trench
GLOBALFOUNDRIES INC6 citations84
US10014214B2Jul 3, 2018
Electronic device including moat power metallization in trench
GLOBALFOUNDRIES INC0 citations52