Inventor
TU TSUN CHUNG
TW10 patents
Patents
10 patentsUS10790439B2Sep 29, 2020
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US9780301B1Oct 3, 2017
Method for manufacturing mixed-dimension and void-free MRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations92
US11075335B2Jul 27, 2021
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10109790B2Oct 23, 2018
Method for manufacturing mixed-dimension and void-free MRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11889769B2Jan 30, 2024
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11469372B2Oct 11, 2022
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12550619B2Feb 10, 2026
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426514B2Sep 23, 2025
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12274183B2Apr 8, 2025
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11489107B2Nov 1, 2022
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62