Inventor
TSAI JIUNYU
TW19 patents
Patents
19 patentsUS10522740B2Dec 31, 2019
Techniques for MRAM MTJ top electrode to metal layer interface including spacer
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10790439B2Sep 29, 2020
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US9780301B1Oct 3, 2017
Method for manufacturing mixed-dimension and void-free MRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations92
US10797230B2Oct 6, 2020
Techniques for MRAM MTJ top electrode to metal layer interface including spacer
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10504958B2Dec 10, 2019
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11075335B2Jul 27, 2021
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10109790B2Oct 23, 2018
Method for manufacturing mixed-dimension and void-free MRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11189659B2Nov 30, 2021
Techniques for MRAM MTJ top electrode to via interface
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11043531B2Jun 22, 2021
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11005032B2May 11, 2021
Techniques for MRAM MTJ top electrode to metal layer interface including spacer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11889769B2Jan 30, 2024
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11469372B2Oct 11, 2022
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12563975B2Feb 24, 2026
Magnetic memory device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12550619B2Feb 10, 2026
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426514B2Sep 23, 2025
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12274183B2Apr 8, 2025
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11678493B2Jun 13, 2023
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11489107B2Nov 1, 2022
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12167614B2Dec 10, 2024
Techniques for MRAM MTJ top electrode to via interface
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52