Inventor
SHIN HEEJU
KR12 patents
⚠️ This page may combine multiple inventors who share the name “SHIN HEEJU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS9985204B2May 29, 2018
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US12477956B2Nov 18, 2025
Magnetic memory device including capping pattern on non-magnetic pattern
SAMSUNG ELECTRONICS CO LTD1 citations63
US12190928B2Jan 7, 2025
Magnetoresistive random access memory device having a metal layer doped with a magnetic material
SAMSUNG ELECTRONICS CO LTD0 citations62
US12029134B2Jul 2, 2024
Semiconductor devices having oxidation control layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11935677B2Mar 19, 2024
Magnetic device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12262641B2Mar 25, 2025
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11942128B2Mar 26, 2024
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
OH SECHUNG
3 patentsUS8692342B2Apr 8, 2014
Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern
OH SECHUNG41 citations97
US9318695B2Apr 19, 2016
Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
OH SECHUNG12 citations83
US8987850B2Mar 24, 2015
Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
OH SECHUNG4 citations83