P

Inventor

LI KUO-LUNG

TW16 patents
⚠️ This page may combine multiple inventors who share the name “LI KUO-LUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

12 patents
US10199385B1Feb 5, 2019

Non-volatile memory device with reduced distance between control gate electrode and selecting gate electrode and manufacturing method thereof

UNITED MICROELECTRONICS CORP2 citations71
US10340282B1Jul 2, 2019

Semiconductor memory device and fabrication method thereof

UNITED MICROELECTRONICS CORP2 citations70
US11600709B2Mar 7, 2023

Memory cell and fabricating method of the same

UNITED MICROELECTRONICS CORP0 citations59
US11417742B1Aug 16, 2022

Memory cell and fabricating method of the same

UNITED MICROELECTRONICS CORP0 citations59
US9129852B1Sep 8, 2015

Method for fabricating non-volatile memory semiconductor device

UNITED MICROELECTRONICS CORP3 citations59
US11374109B2Jun 28, 2022

Method for fabricating gate structures

UNITED MICROELECTRONICS CORP0 citations49
US10720440B2Jul 21, 2020

Method for fabricating semiconductor structure

UNITED MICROELECTRONICS CORP0 citations49
US9966382B2May 8, 2018

Semiconductor structure and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations49
US11362186B2Jun 14, 2022

Non-volatile memory device and method for manufacturing the same

UNITED MICROELECTRONICS CORP0 citations48
US10580780B2Mar 3, 2020

Semiconductor structure and method of forming the same

UNITED MICROELECTRONICS CORP0 citations47
US9412851B2Aug 9, 2016

Method for fabricating semiconductor device including a patterned multi-layered dielectric film with an exposed edge

UNITED MICROELECTRONICS CORP0 citations47
US9466497B1Oct 11, 2016

Method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell

UNITED MICROELECTRONICS CORP0 citations40

TAIWAN SEMICONDUCTOR MFG CO LTD

3 patents

ASMEDIA TECH INC

1 patent