Inventor
OGAWA TAKUZO
20 patents
Patents
20 patentsUS4290830ASep 22, 1981
Method of selectively diffusing aluminium into a silicon semiconductor substrate
HITACHI LTD42 citations92
US4223328ASep 16, 1980
Field controlled thyristor with dual resistivity field layer
HITACHI LTD42 citations92
US4193826AMar 18, 1980
Vapor phase diffusion of aluminum with or without boron
HITACHI LTD35 citations92
US4100310AJul 11, 1978
Method of doping inpurities
HITACHI LTD53 citations92
US4058821ANov 15, 1977
Photo-coupler semiconductor device and method of manufacturing the same
HITACHI LTD36 citations92
US4016593AApr 5, 1977
Bidirectional photothyristor device
HITACHI LTD28 citations82
US4079405AMar 14, 1978
Semiconductor photodetector
HITACHI LTD26 citations79
US4354121AOct 12, 1982
Field controlled thyristor control circuit with additional FCT in reverse bias circuit
HITACHI LTD10 citations74
US4146906AMar 27, 1979
Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity
HITACHI LTD14 citations74
US4136351AJan 23, 1979
Photo-coupled semiconductor device
HITACHI LTD14 citations74
US4040084AAug 2, 1977
Semiconductor device having high blocking voltage with peripheral circular groove
HITACHI LTD16 citations74
US3978514AAug 31, 1976
Diode-integrated high speed thyristor
HITACHI LTD16 citations74
US3967308AJun 29, 1976
Semiconductor controlled rectifier
HITACHI LTD9 citations74
US3943547AMar 9, 1976
Semiconductor device
HITACHI LTD19 citations74
US4262295AApr 14, 1981
Semiconductor device
HITACHI LTD14 citations73
US4200877AApr 29, 1980
Temperature-compensated voltage reference diode with intermediate polycrystalline layer
HITACHI LTD17 citations73
US4210464AJul 1, 1980
Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers
HITACHI LTD14 citations72
US4164436AAug 14, 1979
Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source
HITACHI LTD6 citations63
US3943550AMar 9, 1976
Light-activated semiconductor-controlled rectifier
HITACHI LTD2 citations63
US4219832AAug 26, 1980
Thyristor having low on-state voltage with low areal doping emitter region
HITACHI LTD5 citations62