P

Inventor

IMAOKA KAZUNORI

JP16 patents

Patents

16 patents
US5250836AOct 5, 1993

Semiconductor device having silicon-on-insulator structure

FUJITSU LTD26 citations92
US5231045AJul 27, 1993

Method of producing semiconductor-on-insulator structure by besol process with charged insulating layers

FUJITSU LTD50 citations92
US5148247ASep 15, 1992

Semiconductor device having trench isolation

FUJITSU LTD41 citations92
US4801559AJan 31, 1989

Process for forming planar wiring using polysilicon to fill gaps

FUJITSU LTD30 citations92
US4597804AJul 1, 1986

Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

FUJITSU LTD27 citations92
US5426073AJun 20, 1995

Method of fabricating semiconductor devices using an intermediate grinding step

FUJITSU LTD44 citations91
US6232663B1May 15, 2001

Semiconductor device having interlayer insulator and method for fabricating thereof

FUJITSU LTD19 citations90
US5094963AMar 10, 1992

Process for producing a semiconductor device with a bulk-defect region having a nonuniform depth

FUJITSU LTD23 citations89
US5162254ANov 10, 1992

Semiconductor device having a SOI substrate and fabrication method thereof

FUJITSU LTD23 citations88
US5238857AAug 24, 1993

Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure

FUJITSU LTD18 citations74
US5075249ADec 24, 1991

Method of making a bic memory cell having contact openings with straight sidewalls and sharp-edge rims

FUJITSU LTD11 citations74
US5066993ANov 19, 1991

Semiconductor device having semiconductor-on-insulator structure

FUJITSU LTD19 citations74
US5017998AMay 21, 1991

Semiconductor device using SOI substrate

FUJITSU LTD11 citations73
US4918499AApr 17, 1990

Semiconductor device with improved isolation between trench capacitors

FUJITSU LTD10 citations72
US4970568ANov 13, 1990

Semiconductor device and a process for producing a semiconductor device

FUJITSU LTD10 citations70
US5498893AMar 12, 1996

Semiconductor device having SOI substrate and fabrication method thereof

FUJITSU LTD15 citations69