P

Inventor

JOO SANG-HYUN

KR51 patents
⚠️ This page may combine multiple inventors who share the name “JOO SANG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US9779833B2Oct 3, 2017

Flash memory device revising program voltage, three-dimensional memory device, memory system including the memory device, and methods of programming the memory device

SAMSUNG ELECTRONICS CO LTD12 citations84
US9129696B2Sep 8, 2015

Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US10684914B2Jun 16, 2020

Memory device and method of controlling ECC operation in the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10067825B2Sep 4, 2018

Memory device and method of controlling ECC operation in the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9959933B2May 1, 2018

Non-volatile memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10614887B2Apr 7, 2020

Nonvolatile memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US9892795B2Feb 13, 2018

Nonvolatile memory device and method of operating the nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations69
US9373401B2Jun 21, 2016

Method of programming non-volatile memory device and apparatuses for performing the method

SAMSUNG ELECTRONICS CO LTD1 citations63
US8982618B2Mar 17, 2015

Nonvolatile memory device and related method of operation

SAMSUNG ELECTRONICS CO LTD2 citations63
US8958251B2Feb 17, 2015

Nonvolatile memory device and method of improving a program efficiency thereof

SAMSUNG ELECTRONICS CO LTD3 citations62
US9007850B2Apr 14, 2015

Page buffer, memory device comprising page buffer, and related method of operation

SAMSUNG ELECTRONICS CO LTD2 citations61
US11594295B2Feb 28, 2023

Nonvolatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11348654B2May 31, 2022

Memory device and method for reducing bad block test time

SAMSUNG ELECTRONICS CO LTD0 citations60
US11232845B2Jan 25, 2022

Nonvolatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US11462271B2Oct 4, 2022

Nonvolatile memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations59
US12112056B2Oct 8, 2024

Non-volatile memory device and a method for operating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9747997B2Aug 29, 2017

Non-volatile memory devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8953385B2Feb 10, 2015

Method of programming non-volatile memory device and apparatuses for performing the method

SAMSUNG ELECTRONICS CO LTD0 citations52
US11742052B2Aug 29, 2023

Nonvolatile memory device and storage device including nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10665302B2May 26, 2020

Non-volatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD0 citations51
US11443817B2Sep 13, 2022

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations48
US12020759B2Jun 25, 2024

Operation method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations47
US12518840B2Jan 6, 2026

Nonvolatile memory device supporting GIDL erase operation

SAMSUNG ELECTRONICS CO LTD0 citations42

NEWDIN CONTENTS CO LTD

6 patents

JOO SANG-HYUN

5 patents

JOO SANG HYUN

3 patents

KOREA ELECTRONICS TELECOMM

2 patents

CHOI KI HWAN

1 patent

LEE JI-SANG

1 patent

CHOI BUM SUK

1 patent

GOLFZON CO LTD

1 patent

CHOI YOON HEE

1 patent

KIM KYUNGRYUN

1 patent

JUNG KEE-HO

1 patent

LIM BONG SOON

1 patent

ANYGEN CO LTD

1 patent

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent

AGENCY DEFENSE DEV

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.