Inventor
BRIGHAM LAWRENCE N
US10 patents
Patents
10 patentsUS5714413AFeb 3, 1998
Method of making a transistor having a deposited dual-layer spacer structure
INTEL CORP117 citations97
US6274913B1Aug 14, 2001
Shielded channel transistor structure with embedded source/drain junctions
INTEL CORP62 citations96
US6046494AApr 4, 2000
High tensile nitride layer
INTEL CORP62 citations95
US5891809AApr 6, 1999
Manufacturable dielectric formed using multiple oxidation and anneal steps
INTEL CORP92 citations95
US5633202AMay 27, 1997
High tensile nitride layer
INTEL CORP65 citations95
US6380010B2Apr 30, 2002
Shielded channel transistor structure with embedded source/drain junctions
INTEL CORP30 citations92
US6703672B1Mar 9, 2004
Polysilicon/amorphous silicon composite gate electrode
INTEL CORP16 citations91
US6017819AJan 25, 2000
Method for forming a polysilicon/amorphous silicon composite gate electrode
INTEL CORP18 citations91
US5911111AJun 8, 1999
Polysilicon polish for patterning improvement
INTEL CORP18 citations84
US6720631B2Apr 13, 2004
Transistor having a deposited dual-layer spacer structure
INTEL CORP7 citations72