Inventor
HANNA JUN-ICHI
JP28 patents
⚠️ This page may combine multiple inventors who share the name “HANNA JUN-ICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
20 patentsUS4771015ASep 13, 1988
Method for producing an electronic device having a multi-layer structure
CANON KK504 citations99
US5482557AJan 9, 1996
Device for forming deposited film
CANON KK36 citations93
US5366554ANov 22, 1994
Device for forming a deposited film
CANON KK25 citations93
US5160543ANov 3, 1992
Device for forming a deposited film
CANON KK35 citations93
US4868014ASep 19, 1989
Method for forming thin film multi-layer structure member
CANON KK54 citations93
US4842897AJun 27, 1989
Method for forming deposited film
CANON KK27 citations92
US4818560AApr 4, 1989
Method for preparation of multi-layer structure film
CANON KK34 citations92
US4812331AMar 14, 1989
Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent
CANON KK24 citations92
US5213997AMay 25, 1993
Method for forming crystalline film employing localized heating of the substrate
CANON KK19 citations82
US5718761AFeb 17, 1998
Method of forming crystalline compound semiconductor film
CANON KK9 citations74
US5322568AJun 21, 1994
Apparatus for forming deposited film
CANON KK14 citations74
US4865883ASep 12, 1989
Method for forming a deposited film containing IN or SN
CANON KK8 citations74
US4844950AJul 4, 1989
Method for forming a metal film on a substrate
CANON KK16 citations74
US4834023AMay 30, 1989
Apparatus for forming deposited film
CANON KK14 citations74
US4772570ASep 20, 1988
Method for producing an electronic device having a multi-layer structure
CANON KK10 citations74
US5795396AAug 18, 1998
Apparatus for forming crystalline film
CANON KK4 citations63
US5624720AApr 29, 1997
Process for forming a deposited film by reacting between a gaseous starting material and an oxidizing agent
CANON KK4 citations63
US5470389ANov 28, 1995
Apparatus for forming deposited film
CANON KK2 citations63
US4869931ASep 26, 1989
Method for forming deposited films of group II-VI compounds
CANON KK3 citations63
US4837048AJun 6, 1989
Method for forming a deposited film
CANON KK6 citations63
DAINIPPON PRINTING CO LTD
5 patentsUS7102154B2Sep 5, 2006
Organic semiconductor structure, process for producing the same, and organic semiconductor device
DAINIPPON PRINTING CO LTD14 citations84
US7259390B2Aug 21, 2007
Organic semiconductor material
DAINIPPON PRINTING CO LTD7 citations72
US7365359B2Apr 29, 2008
Organic semiconductor material and organic semiconductor element
DAINIPPON PRINTING CO LTD2 citations60
US7847284B2Dec 7, 2010
Organic semiconductor material, organic semiconductor structure, and organic semiconductor device
DAINIPPON PRINTING CO LTD5 citations58
US7638795B2Dec 29, 2009
Organic semiconductor structure, process for producing the same, and organic semiconductor device
DAINIPPON PRINTING CO LTD1 citations52