Inventor
TSUKADA YUSUKE
JP17 patents
⚠️ This page may combine multiple inventors who share the name “TSUKADA YUSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI CHEM CORP
12 patentsUS11038024B2Jun 15, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP4 citations83
US10475887B2Nov 12, 2019
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP5 citations83
US10066319B2Sep 4, 2018
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP6 citations82
US11664428B2May 30, 2023
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP1 citations72
US11031475B2Jun 8, 2021
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP3 citations72
US10734485B2Aug 4, 2020
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
MITSUBISHI CHEM CORP1 citations71
US10655244B2May 19, 2020
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device
MITSUBISHI CHEM CORP2 citations71
US12107129B2Oct 1, 2024
Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device
MITSUBISHI CHEM CORP0 citations62
US11670687B2Jun 6, 2023
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
MITSUBISHI CHEM CORP0 citations61
US11236439B2Feb 1, 2022
Non-polar or semi-polar GaN wafer
MITSUBISHI CHEM CORP0 citations61
US9673046B2Jun 6, 2017
Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
MITSUBISHI CHEM CORP1 citations61
US10612161B2Apr 7, 2020
GaN substrate
MITSUBISHI CHEM CORP0 citations38